Philips Magnetoresistive Sensor manual T flipping current if Time Internal magnetization

Page 25

Philips Semiconductors

Magnetoresistive sensors for

magnetic ﬁeld measurement

General

VO

VO

Hy

T T T flipping current IF

time

internal magnetization

offset

time

(a)

VO

time

(b)

VO

time

(c)

MBH618

Fig.30 Timing diagram for flipping circuit (a) output voltage; (b) filtered output voltage; (c) output voltage filtered and demodulated.

2000 Sep 06

25

Image 25

Contents General Magnetoresistive sensors for Magnetic ﬁeld measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Sensitivity Sensor FieldLinearize Application Package Range TypeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = RGiven by Positive temperature coefficient TCA1 = 1 + Magnetoresistive sensorResistance- ﬁeld relation Appendix 1 the Magnetoresistive EffectSinφcosφ Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse ﬁeld Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Weak Field Measurement ContentsFundamental measurement techniques Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect