CY7C1161V18, CY7C1176V18

CY7C1163V18, CY7C1165V18

Application Example

Figure 1 shows four QDR-II+ used in an application.

Figure 1. Application Example

 

 

 

SRAM #1

 

ZQ

RQ = 250ohms

 

 

ZQ

RQ = 250ohms

 

Vt

 

CQ/CQ

 

 

SRAM #4

CQ/CQ

 

 

 

D

RPS WPS BWS

 

Q

 

D

 

Q

 

 

R

A

K

K

 

A

RPS WPS BWS

K K

 

DATA IN

 

 

 

 

 

 

R

 

 

DATA OUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

Address

 

 

 

 

 

 

Vt

 

 

BUS MASTER

RPS

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

(CPU or ASIC)

WPS

 

 

 

 

 

 

 

 

 

 

BWS

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

R = 50ohms, Vt = VDDQ/2

 

 

 

 

 

 

 

 

Truth Table

The truth table for the CY7C1161V18, CY7C1176V18, CY7C1163V18, and CY7C1165V18 follows.[3, 4, 5, 6, 7, 8]

Operation

K

 

RPS

 

 

WPS

DQ

DQ

DQ

DQ

Write Cycle: Load

L-H

 

H[9]

 

 

L[10]

D(A) at K(t + 1)

D(A + 1) at

 

 

D(A + 2) at K(t + 2)

 

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

address on rising edge of

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K; input write data on two

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

consecutive K and K rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle (2.5 Cycle

L-H

 

L[10]

 

 

X

Q(A) at

 

 

Q(A + 1) at K(t + 3)

 

 

 

Q(A + 3) at K(t + 4)

 

 

K(t + 2)

Q(A + 2) at K(t + 3)

Latency): Load address on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edge of K; wait one

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and a half cycle; read data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No operation.

L-H

 

H

 

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

 

Q = High Z

Q = High Z

Q = High Z

Q = High Z

 

 

 

 

 

 

 

 

 

 

 

Standby: Clock stopped.

Stopped

 

X

 

 

X

Previous State

Previous State

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.The above application shows four QDR-II+ being used.

3.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

4.Device powers up deselected and the outputs in a tri-state condition.

5.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.

6.“t” represents the cycle at which a read or write operation is started. t + 1, t + 2, t + 3 and t + 4 are the first, second, third, and fourth clock cycles, respectively succeeding the “t” clock cycle.

7.Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.

8.It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

9.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

10.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request.

Document Number: 001-06582 Rev. *D

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Cypress CY7C1163V18, CY7C1165V18 manual Application Example, Truth Table, Operation, Write Cycle Load, Read Cycle 2.5 Cycle