CY7C1345G

Burst Sequences

The CY7C1345G provides an on-chip two-bit wrap around burst counter inside the SRAM. The burst counter is fed by A[1:0] and follows either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE selects a linear burst sequence. A HIGH on MODE selects an interleaved burst order. Leaving MODE unconnected causes the device to default to a interleaved burst sequence.

Table 1. Interleaved Burst Address Table (MODE = Floating or VDD)

First

Second

Third

Fourth

Address

Address

Address

Address

A1, A0

A1, A0

A1, A0

A1, A0

00

01

10

11

 

 

 

 

01

00

11

10

 

 

 

 

10

11

00

01

 

 

 

 

11

10

01

00

 

 

 

 

Table 2. Linear Burst Address Table (MODE = GND)

First

Second

Third

Fourth

Address

Address

Address

Address

A1, A0

A1, A0

A1, A0

A1, A0

00

01

10

11

 

 

 

 

01

10

11

00

 

 

 

 

10

11

00

01

 

 

 

 

11

00

01

10

 

 

 

 

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation sleep mode. Two clock cycles are required to enter into or exit from this sleep mode. In this mode, data integrity is guaranteed. Accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed. The device is deselected prior to entering the sleep mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min

Max

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD – 0.2V

 

40

mA

tZZS

Device operation to ZZ

ZZ > VDD – 0.2V

 

2tCYC

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

 

ns

tZZI

ZZ Active to sleep current

This parameter is sampled

 

2tCYC

ns

tRZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

 

ns

Document Number: 38-05517 Rev. *E

Page 7 of 20

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Image 7
Cypress CY7C1345G manual ZZ Mode Electrical Characteristics, Parameter Description Test Conditions Min Max Unit

CY7C1345G specifications

The Cypress CY7C1345G is a high-performance static random-access memory (SRAM) device designed for various applications requiring fast data access and minimal power consumption. As a member of Cypress's prolific family of SRAMs, the CY7C1345G is particularly noted for its performance in networking and telecommunications.

This device features a 512 Kbit (64 K x 8) memory organization, making it suitable for applications needing moderate amounts of fast-access memory. The CY7C1345G operates at a wide voltage range of 2.7V to 3.6V, accommodating both high-performance and low-power applications. One of its standout attributes is its fast access time, with read cycle times as low as 10 ns, allowing for rapid data retrieval that is essential for modern computing requirements.

Another key feature of the CY7C1345G is its low-power operation mode, making it an excellent choice for battery-operated applications. It has a typical active current of only 35 mA and a standby current of just 3 µA, ensuring prolonged battery life while still maintaining high-performance levels. This low power consumption is complemented by the device's sleep mode functionality, which further reduces power draw during periods of inactivity.

In terms of interface, the CY7C1345G employs a simple asynchronous access protocol, ensuring ease of integration into existing systems without the need for complex timing schemes. The device supports asynchronous read and write operations, with an output enable feature that facilitates efficient data retrieval.

The CY7C1345G is encased in a compact 44-pin TSOP II package, making it suitable for applications where space constraints are critical. Its design adheres to rigorous quality and reliability standards, with the device being fully tested to meet JEDEC specifications.

With its blend of speed, low power consumption, and simple interface, the Cypress CY7C1345G SRAM is ideal for a wide array of applications, including telecommunications systems, networking devices, and embedded systems. As technology drives the demand for faster and more efficient memory solutions, the CY7C1345G stands out as a reliable and versatile choice in the SRAM landscape.