CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

Features

Functional Description [1]

•Supports bus operation up to 250 MHz

•Available speed grades are 250, 200, and 167 MHz

•Registered inputs and outputs for pipelined operation

•2.5V core power supply

•Fast clock-to-output times, 2.6 ns (for 250-MHz device)

•Provides high-performance 3-1-1-1 access rate

•User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences

•Separate processor and controller address strobes

•Synchronous self timed writes

•Asynchronous output enable

•Single Cycle Chip Deselect

•CY7C1380DV25/CY7C1382DV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1380FV25/CY7C1382FV25 available in Pb-free and non Pb-free 119-ball BGA package

•IEEE 1149.1 JTAG-Compatible Boundary Scan

•ZZ sleep mode option

Selection Guide

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 SRAM integrates 512K x 36 and 1M x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth expansion chip enables (CE2 and CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWX, and BWE), and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of clock when either address strobe processor (ADSP) or address strobe controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the advance pin (ADV).

Address, data inputs, and write controls are registered on-chip to initiate a self timed write cycle.This part supports byte write operations (see Pin Definitions on page 6 and Truth Table [4, 5, 6, 7, 8] on page 9 for further details). Write cycles can be one to two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written.

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 operates from a +2.5V core power supply while all outputs may operate with a +2.5 supply. All inputs and outputs are JEDEC-standard and JESD8-5-compatible.

 

250 MHz

200 MHz

167 MHz

Unit

Maximum Access Time

2.6

3.0

3.4

ns

 

 

 

 

 

Maximum Operating Current

350

300

275

mA

 

 

 

 

 

Maximum CMOS Standby Current

70

70

70

mA

 

 

 

 

 

Notes:

1.For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.

2.CE3, CE2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05546 Rev. *E

Revised Feburary 15, 2007

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Cypress CY7C1380DV25 manual Features, Selection Guide, MHz 200 MHz 167 MHz Unit, Cypress Semiconductor Corporation
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CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.
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