18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1380DV25, CY7C1380FV25
CY7C1382DV25, CY7C1382FV25
CypressSemiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document #: 38-05546 Rev. *E Revised Feburary 15, 2007
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
• Fast clock-to-output times, 2.6 ns (for 250-MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• CY7C1380DV25/CY7C1382DV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 165-ball FBGA package.
CY7C1380FV25/CY7C1382FV25 available in Pb-free and
non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
Functional Description [1]
The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/
CY7C1382FV25 SRAM integrates 512K x 36 and 1M x 18
SRAM cells with advanced synchronous peripheral circuitry
and a two-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive edge triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE1), depth expansion chip enables (CE2 and
CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write
enables (BWX, and BWE), and global write (GW).
Asynchronous inputs include the output enable (OE) and the
ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see Pin Definitions on page 6 and Truth Table [4,
5, 6, 7, 8] on page9 fo r further details). Write cycles can be one
to two or four bytes wide as controlled by the byte write control
inputs. GW when active LOW causes all bytes to be written.
The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/
CY7C1382FV25 operates from a +2.5V core power supply
while all outputs may operate with a +2.5 supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
Selection Guide
250 MHz 200 MHz 167 MHz Unit
Maximum Access Time 2.6 3.0 3.4 ns
Maximum Operating Current 350 300 275 mA
Maximum CMOS Standby Current 70 70 70 mA
Notes:
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE3, CE2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable
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