CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

Pin Configurations (continued)

119-Ball BGA Pinout

CY7C1380FV25 (512K x 36)

 

1

2

3

 

4

 

 

 

 

 

 

 

5

 

 

6

7

A

VDDQ

A

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A

VDDQ

 

ADSP

B

NC/288M

A

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A

NC/576M

 

ADSC

C

NC/144M

A

 

A

 

 

 

VDD

 

A

A

NC/1G

D

DQC

DQPC

 

VSS

 

 

 

 

 

NC

 

VSS

DQPB

DQB

E

DQC

DQC

 

VSS

 

 

 

 

 

 

1

 

 

 

VSS

DQB

DQB

 

 

 

CE

F

VDDQ

DQC

 

VSS

 

 

 

 

 

 

 

 

 

 

 

VSS

DQB

VDDQ

 

 

 

 

 

OE

G

DQC

DQC

 

 

C

 

 

 

 

 

 

 

 

 

 

 

B

DQB

DQB

BW

 

 

 

ADV

 

 

 

BW

H

DQC

DQC

 

VSS

 

 

 

 

 

 

 

 

VSS

DQB

DQB

 

 

 

 

GW

J

VDDQ

VDD

 

NC

 

 

 

VDD

 

NC

VDD

VDDQ

K

DQD

DQD

 

VSS

 

 

 

CLK

 

VSS

DQA

DQA

L

DQD

DQD

 

 

D

 

 

 

 

 

NC

 

 

A

DQA

DQA

 

BW

 

 

 

 

 

 

BW

M

VDDQ

DQD

 

VSS

 

 

 

 

 

VSS

DQA

VDDQ

 

 

 

BWE

 

N

DQD

DQD

 

VSS

 

 

 

 

 

A1

 

VSS

DQA

DQA

P

DQD

DQPD

 

VSS

 

 

 

 

 

A0

 

VSS

DQPA

DQA

R

NC

A

MODE

 

 

 

VDD

 

NC

A

NC

T

NC

NC/72M

 

A

 

 

 

 

 

A

 

A

NC/36M

ZZ

U

VDDQ

TMS

 

TDI

 

 

 

TCK

 

TDO

NC

VDDQ

CY7C1382FV25 (1M x 18)

 

1

2

3

 

4

 

 

 

 

 

 

 

5

 

6

7

A

VDDQ

A

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A

VDDQ

 

ADSP

B

NC/288M

A

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

A

A

NC/576M

 

ADSC

C

NC/144M

A

 

A

 

 

 

VDD

 

A

A

NC/1G

D

DQB

NC

 

VSS

 

 

 

 

 

NC

 

VSS

DQPA

NC

E

NC

DQB

 

VSS

 

 

 

 

 

 

1

 

 

 

VSS

NC

DQA

 

 

 

CE

F

VDDQ

NC

 

VSS

 

 

 

 

 

 

 

 

 

 

 

VSS

DQA

VDDQ

 

 

 

 

 

OE

G

NC

DQB

 

 

B

 

 

 

 

 

 

 

 

 

NC

NC

DQA

BW

 

 

 

ADV

H

DQB

NC

 

VSS

 

 

 

 

 

 

 

 

VSS

DQA

NC

 

 

 

 

GW

J

VDDQ

VDD

 

NC

 

 

 

VDD

 

NC

VDD

VDDQ

K

NC

DQB

 

VSS

 

 

 

CLK

 

VSS

NC

DQA

L

DQB

NC

 

NC

 

 

 

 

 

NC

 

 

A

DQA

NC

 

 

 

 

 

 

 

BW

M

VDDQ

DQB

 

VSS

 

 

 

 

 

VSS

NC

VDDQ

 

 

 

BWE

 

N

DQB

NC

 

VSS

 

 

 

 

 

A1

 

VSS

DQA

NC

P

NC

DQPB

 

VSS

 

 

 

 

 

A0

 

VSS

NC

DQA

R

NC

A

MODE

 

 

 

VDD

 

NC

A

NC

T

NC/72M

A

 

A

NC/36M

 

A

A

ZZ

U

VDDQ

TMS

 

TDI

 

 

 

TCK

 

TDO

NC

VDDQ

Document #: 38-05546 Rev. *E

Page 4 of 29

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Cypress CY7C1382DV25, CY7C1380DV25, CY7C1382FV25 manual Pin Configurations Ball BGA Pinout, CY7C1380FV25 512K x

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.