CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25

2.5V TAP AC Test Conditions

Input pulse levels

VSS to 2.5V

Input rise and fall time

1 ns

Input timing reference levels

1.25V

Output reference levels

1.25V

Test load termination supply voltage

1.25V

2.5V TAP AC Output Load Equivalent

1.25V

50

TDO

ZO= 50

 

 

 

 

20pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TAP DC Electrical Characteristics And Operating Conditions

(0°C < T < +70°C; V = 2.5V ±0.125V unless otherwise noted) [12]

 

 

 

 

A

DD

 

 

 

 

 

 

Parameter

Description

Test Conditions

Min.

Max.

Unit

 

 

 

 

 

 

VOH1

Output HIGH Voltage

IOH = –1.0 mA, VDDQ = 2.5V

2.0

 

V

VOH2

Output HIGH Voltage

IOH = –100 µA, VDDQ = 2.5V

2.1

 

V

VOL1

Output LOW Voltage

IOL = 8.0 mA, VDDQ = 2.5V

 

0.4

V

VOL2

Output LOW Voltage

IOL = 100 µA

 

VDDQ = 2.5V

 

0.2

V

VIH

Input HIGH Voltage

 

 

VDDQ = 2.5V

1.7

VDD + 0.3

V

VIL

Input LOW Voltage

 

 

VDDQ = 2.5V

–0.3

0.7

V

IX

Input Load Current

GND < VIN < VDDQ

 

–5

5

µA

Identification Register Definitions

 

CY7C1380DV25/

CY7C1382DV25/

 

Instruction Field

CY7C1380FV25

CY7C1382FV25

Description

(512K x 36)

(1 Mbit x 18)

Revision Number (31:29)

000

000

Describes the version number.

 

 

 

 

Device Depth (28:24)

01011

01011

Reserved for internal use.

 

 

 

 

Device Width (23:18) 119-BGA

101000

101000

Defines the memory type and architecture.

 

 

 

 

Device Width (23:18) 165-FBGA

000000

000000

Defines the memory type and architecture.

 

 

 

 

Cypress Device ID (17:12)

100101

010101

Defines the width and density

 

 

 

 

Cypress JEDEC ID Code (11:1)

00000110100

00000110100

Allows unique identification of SRAM vendor.

 

 

 

 

ID Register Presence Indicator (0)

1

1

Indicates the presence of an ID register.

 

 

 

 

Scan Register Sizes

Register Name

Bit Size (x36)

Bit Size (x18)

 

 

 

Instruction

3

3

 

 

 

Bypass

1

1

 

 

 

ID

32

32

 

 

 

Boundary Scan Order (119-ball BGA package)

85

85

 

 

 

Boundary Scan Order (165-ball FBGA package)

89

89

 

 

 

Note:

12. All voltages referenced to VSS (GND).

Document #: 38-05546 Rev. *E

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Cypress CY7C1380FV25 5V TAP AC Test Conditions, 5V TAP AC Output Load Equivalent, Identification Register Definitions

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.