A11 | Cypress CY7C1382DV25, CY7C1380DV25, CY7C1380FV25, CY7C1382FV25

CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

165-Ball BGA Boundary Scan Order [13, 15]

Bit #	Ball ID	Bit #	Ball ID	Bit #	Ball ID
1	N6	31	D10	61	G1

2	N7	32	C11	62	D2

3	N10	33	A11	63	E2

4	P11	34	B11	64	F2

5	P8	35	A10	65	G2

6	R8	36	B10	66	H1

7	R9	37	A9	67	H3

8	P9	38	B9	68	J1

9	P10	39	C10	69	K1

10	R10	40	A8	70	L1

11	R11	41	B8	71	M1

12	H11	42	A7	72	J2

13	N11	43	B7	73	K2

14	M11	44	B6	74	L2

15	L11	45	A6	75	M2

16	K11	46	B5	76	N1

17	J11	47	A5	77	N2

18	M10	48	A4	78	P1

19	L10	49	B4	79	R1

20	K10	50	B3	80	R2

21	J10	51	A3	81	P3

22	H9	52	A2	82	R3

23	H10	53	B2	83	P2

24	G11	54	C2	84	R4

25	F11	55	B1	85	P4

26	E11	56	A1	86	N5

27	D11	57	C1	87	P6

28	G10	58	D1	88	R6

29	F10	59	E1	89	Internal

30	E10	60	F1

Note:

15. Bit #89 is preset HIGH.

Document #: 38-05546 Rev. *E

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Cypress CY7C1382DV25, CY7C1380DV25, CY7C1380FV25, CY7C1382FV25 manual A11

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.

Contents

Features Selection Guide250 MHz 200 MHz 167 MHz Unit Cypress Semiconductor Corporation Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K x Logic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x CY7C1380DV25 512K X Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1382DV25 1M x Pin Configurations Ball BGA Pinout CY7C1380FV25 512K x Pin Configurations Ball Fbga Pinout 3 Chip Enable CY7C1380DV25 512K x Power supply inputs to the core of the device Pin DefinitionsName Description Byte write select inputs, active LOW. Qualified with Power supply for the IO circuitry Single Read AccessesSingle Write Accesses Initiated by Adsp Functional Overview Interleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Burst Sequences Operation Add. Used CE1 CE2 CE3 Adsp Adsc ADV Write CLK Function CY7C1380DV25/CY7C1380FV25 Truth Table for Read/Write 6Function CY7C1382DV25/CY7C1382FV25 TAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag Bypass Register TAP Instruction Set TAP AC Switching Characteristics TAP TimingParameter Description Min Max Unit Clock Hold Times TAP DC Electrical Characteristics And Operating Conditions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Identification Register Definitions Identification Codes Ball BGA Boundary Scan Order 13Instruction Code Description Bit # Ball ID A11 Maximum Ratings Electrical CharacteristicsOperating Range Capacitance Thermal ResistanceAC Test Loads and Waveforms Package Switching Characteristics Setup Times250 MHz 200 MHz 167 MHz Parameter Description Min Output Times Switching Waveforms Read Cycle Timing Write Cycle Timing 25 Read/Write Cycle Timing 25, 27 CLZ ZZ Mode Timing 29 DON’T Care Ordering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Ball BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Orig. Description of Change DateDocument Number