CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

Switching Waveforms

Read Cycle Timing [25]

tCYC

CLK

tCH

tADS tADH

ADSP

ADSC

tAS tAH

tCL

tADS tADH

ADDRESS

GW, BWE, BWx

A1

A2

A3

tWES tWEH

Burst continued with

new base address

CE

ADV

OE

Data Out (Q)

tCES tCEH

 

tADVS

tADVH

 

 

 

 

 

 

 

 

 

ADV

 

 

 

 

 

 

suspends

 

 

 

 

 

 

burst.

 

 

 

tOEV

tCO

 

 

 

 

tOEHZ

tOELZ

tDOH

 

 

 

 

tCLZ

 

 

 

 

 

High-Z

Q(A1)

 

Q(A2)

Q(A2 + 1)

Q(A2 + 2)

Q(A2 + 3)

 

tCO

 

 

 

 

 

 

Single READ

 

 

 

BURST READ

 

 

 

 

DON’T CARE

 

UNDEFINED

 

Deselect cycle

tCHZ

Q(A2)

Q(A2 + 1)

Burst wraps around to its initial state

Note:

25. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

Document #: 38-05546 Rev. *E

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Cypress CY7C1382DV25, CY7C1380DV25, CY7C1380FV25, CY7C1382FV25 manual Switching Waveforms, Read Cycle Timing

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.