CY7C1380DV25, CY7C1380FV25

 

 

 

 

 

 

CY7C1382DV25, CY7C1382FV25

Logic Block Diagram – CY7C1380DV25/CY7C1380FV25 [3] (512K x 36)

 

 

 

A0, A1, A

 

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REGISTER

 

2

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

 

 

 

 

 

 

 

 

ADV

 

 

 

 

Q1

 

 

 

 

 

CLK

 

 

 

BURST

 

 

 

 

 

 

 

 

COUNTER

 

 

 

 

 

 

 

 

CLR

AND

Q0

 

 

 

 

 

ADSC

 

 

 

LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

DQ D , DQP D

 

 

DQ D ,DQP D

 

 

 

 

 

BW D

 

BYTE

 

 

BYTE

 

 

 

 

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

 

 

 

 

 

 

 

DQ C , DQP C

 

 

DQ C , DQP C

 

 

 

 

 

BW C

 

BYTE

 

 

BYTE

 

 

 

OUTPUT

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

MEMORY

SENSE

OUTPUT

D Q s

 

 

 

 

BUFFERS

 

 

 

 

 

 

ARRAY

REGISTERS

 

 

 

 

 

DQ B , DQP B

AMPS

E

DQP A

 

 

DQ B , DQP B

 

 

 

 

 

 

 

 

 

 

 

DQP B

BW B

 

BYTE

 

 

BYTE

 

 

 

 

 

 

 

 

 

 

 

DQP C

 

 

 

WRITE DRIVER

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQP D

 

 

 

 

 

 

 

 

 

 

 

 

DQ A , DQP A

 

 

DQ A , DQP A

 

 

 

 

 

 

 

 

 

BYTE

 

 

 

 

 

BW A

 

BYTE

 

 

 

 

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

 

BWE

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

 

 

 

INPUT

 

ENABLE

PIPELINED

 

 

 

 

 

REGISTERS

CE

1

REGISTER

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE 3

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Logic Block Diagram – CY7C1382DV25/CY7C1382FV25 [3] (1M x 18)

 

 

 

A0, A1, A

ADDRESS

 

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

CLK

 

COUNTER AND

 

 

 

 

 

 

LOGIC

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

 

DQ B, DQP B

 

DQ B, DQP B

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

BW B

WRITE REGISTER

 

 

 

OUTPUT

DQs

 

 

 

OUTPUT

 

 

MEMORY

SENSE

 

 

 

BUFFERS

DQP A

 

 

 

 

 

 

 

 

ARRAY

 

 

 

DQP B

 

DQ A,DQP A

 

DQ A,DQP A

 

 

 

 

 

 

 

 

 

BW A

 

WRITE DRIVER

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

BWE

 

 

 

 

 

 

INPUT

GW

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE 1

PIPELINED

 

 

 

 

REGISTER

 

 

 

 

CE2

 

 

ENABLE

 

 

 

 

CE3

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

3. CY7C1380F and CY7C1382F have only 1 Chip Enable (CE1).

 

 

 

 

Document #: 38-05546 Rev. *E

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Cypress Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K x, Logic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.