Cypress CY7C1386D, CY7C1386F, CY7C1387F, CY7C1387D manual Pin Definitions, Name Description, Bwc, Bwd

CY7C1386D, CY7C1386F

CY7C1387D, CY7C1387F

Pin Definitions

Name

IO

Description

A0, A1, A

Input-

Address inputs used to select one of the address locations. Sampled at the

Synchronous

rising edge of the CLK if ADSP or ADSC is active LOW, and CE

1

, CE , and

CE

3

[2]

are sampled active. A1: A0 are fed to the two-bit counter.

2

A,

B

Input-

Byte write select inputs, active LOW. Qualified with

to conduct byte writes

BW

BW

BWE

BWC, BWD

Synchronous

to the SRAM. Sampled on the rising edge of CLK.

Input-

Global write enable input, active LOW. When asserted LOW on the rising edge

GW

Synchronous

of CLK, a global write is conducted (all bytes are written, regardless of the values

on BWX and BWE).

Input-

Byte write enable input, active LOW. Sampled on the rising edge of CLK. This

BWE

Synchronous

signal must be asserted LOW to conduct a byte write.

CLK

Input-

Clock input. Used to capture all synchronous inputs to the device. Also used to

Clock

increment the burst counter when ADV is asserted LOW, during a burst operation.

1

Input-

Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in

CE

Synchronous

conjunction with CE2 and CE3 [2] to select or deselect the device. ADSP is ignored

if CE1 is HIGH.

CE

1 is sampled only when a new external address is loaded.

CE2 [2]

Input-

Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in

Synchronous

conjunction with CE

1

and CE [2] to select or deselect the device. CE is sampled

3

2

only when a new external address is loaded.

3 [2]

Input-

Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in

CE

Synchronous

conjunction with CE1 and CE2 to select or deselect the device. Not connected for

BGA. Where referenced, CE [2] is assumed active throughout this document for

3

BGA. CE3 is sampled only when a new external address is loaded.

Input-

Output enable, asynchronous input, active LOW. Controls the direction of the

OE

Asynchronous

IO pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, DQ

pins are tri-stated, and act as input data pins. OE is masked during the first clock of

a read cycle when emerging from a deselected state.

Input-

Advance input signal, sampled on the rising edge of CLK, active LOW. When

ADV

Synchronous

asserted, it automatically increments the address in a burst cycle.

Input-

Address strobe from processor, sampled on the rising edge of CLK, active

ADSP

Synchronous

LOW. When asserted LOW, addresses presented to the device are captured in the

address registers. A1: A0 are also loaded into the burst counter. When ADSP and

ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is

deasserted HIGH.

Input-

Address strobe from controller, sampled on the rising edge of CLK, active

ADSC

Synchronous

LOW. When asserted LOW, addresses presented to the device are captured in the

address registers. A1: A0 are also loaded into the burst counter. When ADSP and

ADSC are both asserted, only ADSP is recognized.

ZZ

Input-

ZZ sleep input, active HIGH. When asserted HIGH places the device in a non-time

Asynchronous

critical sleep condition with data integrity preserved. For normal operation, this pin

has to be LOW. ZZ pin has an internal pull down.

DQs, DQPX

IO-

Bidirectional data IO lines. As inputs, they feed into an on-chip data register that

Synchronous

is triggered by the rising edge of CLK. As outputs, they deliver the data contained

in the memory location specified by the addresses presented during the previous

clock rise of the read cycle. The direction of the pins is controlled by OE. When OE

is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are

placed in a tri-state condition.

VDD

Power Supply

Power supply inputs to the core of the device.

Document Number: 38-05545 Rev. *E

Page 6 of 30

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