CY7C1441AV33
CY7C1443AV33,CY7C1447AV33
Document #: 38-05357 Rev. *G Page 19 of 31
Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. User guidelines are not tested.

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied............................................ –55°C to +125°C

Supply Voltage on VDD Relative to GND........–0.3V to +4.6V

Supply Voltage on VDDQ Relative to GND......–0.3V to +VDD

DC Voltage Applied to Outputs

in Tri-State...........................................–0.5V to VDDQ + 0.5V

DC Input Voltage...................................–0.5V to VDD + 0.5V

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage........................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... >200 mA

Operating Range

Range Ambient

Temperature VDD VDDQ

Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V –5%

to VDD

Industrial –40°C to +85°C

Electrical Characteristics Over the Operating Range[15, 16]

DC Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Max. Unit

VDD Power Supply Voltage 3.135 3.6 V
VDDQ IO Supply Voltage for 3.3V IO 3.135 VDD V
for 2.5V IO 2.375 2.625 V
VOH Output HIGH Voltage for 3.3V IO, IOH = –4.0 mA 2.4 V
for 2.5V IO, IOH = –1.0 mA 2.0 V
VOL Output LOW Voltage for 3.3V IO, IOL = 8.0 mA 0.4 V
for 2.5V IO, IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage[15] for 3.3V IO 2.0 VDD + 0.3V V
for 2.5V IO 1.7 VDD + 0.3V V
VIL Input LOW Voltage[15] for 3.3V IO –0.3 0.8 V
for 2.5V IO –0.3 0.7 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 μA
Input Current of MODE Input = VSS –30 μA
Input = VDD 5μA
Input Current of ZZ Input = VSS –5 μA
Input = VDD 30 μA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5 μA
IDD VDD Operating Supply
Current VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz 310 mA
10-ns cycle, 100 MHz 290 mA
ISB1 Automatic CE
Power down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
inputs switching
All Speeds 180 mA
ISB2 Automatic CE
Power down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All speeds 120 mA
ISB3 Automatic CE
Power down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V,
f = fMAX, inputs switching
All Speeds 180 mA
ISB4 Automatic CE
Power down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All Speeds 135 mA
Notes
15.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
16.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
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