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Magnetoresistive Sensor
manual
General
Models:
Magnetoresistive Sensor
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Sensor characteristics
Sensor Temperature Drift
Using magnetoresistive sensors
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DISCRETE SEMICONDUCTORS
General
Magnetoresistive sensors for magnetic field measurement
2000 Sep 06
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Contents
General
Magnetoresistive sensors for Magnetic field measurement
Contents
Operating principles
Philips Semiconductors
KMZ10 chip structure 2000 Sep
Sensitivity
Sensor Field
Linearize Application Package Range
Type
Flipping
Sensor characteristics
Effect of temperature on behaviour
25 oC
Amb MV/V 75 oC 125 oC Operating range KA/m
KMZ10B
Using magnetoresistive sensors
Further information for advanced users
+ Δ R ⎛ H
2R T
For R 8 = R
Given by
Positive temperature coefficient TC
A1 = 1 +
Magnetoresistive sensor
Resistance- field relation
Appendix 1 the Magnetoresistive Effect
Sinφcosφ
Linearization
Magnetization of the thin layer
Sensitivity
Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m
Materials
Appendix 2 Sensor Flipping
This also considerably enlarges Hk. If a small temperature
Sensor output ‘Vo’ as a function of the transverse field Hy
Appendix 3 Sensor Layout
KMZ10 and KMZ11 bridge configuration 2000 Sep
Weak Field Measurement
Contents
Fundamental measurement techniques
Flipping coil
T flipping current if Time Internal magnetization
Sensor Temperature Drift
25 oC
Flipping coil Sensor KMZ10A1
Technique Effect
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