Philips Semiconductors
Magnetoresistive sensors for
magnetic field measurement
Further information for advanced users
THE MR EFFECT
General
In sensors employing the MR effect, the resistance of the |
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sensor under the influence of a magnetic field changes as |
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it is moved through an angle α as given by: | handbook, halfpage | Barber pole | |||
R = RO + ΔRO cos2 α |
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(2) |
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It can be shown that | I | I | |||
sin | 2 | α = | H2 | (3) |
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| HO2 |
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and |
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| Permalloy | |
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| Magnetization | ||
sin2 α = 1 for H > HO | (4) |
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where Ho can be regarded as a material constant |
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comprising the so called demagnetizing and anisotropic |
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fields. | Fig.12 Linearization of the magnetoresistive effect. |
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Applying equations (3) and (4) to equation (2) leads to:
R | = RO | ⎛ | H2 ⎞ | (5) | A Wheatstone bridge configuration is also used for |
+ ΔRO ⎜1 | |||||
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| ⎝ | H2 ⎠ |
| linearized applications. In one pair of diagonally opposed |
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R = RO for H > HO | (6) | elements, the Barber poles are at +45° to the strip axis, | |||
while in another pair they are at −45°. A resistance |
increase in one pair of elements due to an external magnetic field is thus ‘matched’ by a decrease in resistance of equal magnitude in the other pair.
The resulting bridge imbalance is then a linear function of the amplitude of the external magnetic field in the plane of the permalloy strips, normal to the strip axis.
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