Intel 5000 manual Thermal Specifications, Thermal Design Power TDP, Case Temperature

Thermal Specifications

3Thermal Specifications

3.1Thermal Design Power (TDP)

Analysis indicates that real applications are unlikely to cause the MCH component to consume maximum power dissipation for sustained time periods. Therefore, in order to arrive at a more realistic power level for thermal design purposes, Intel characterizes power consumption based on known platform benchmark applications. The resulting power consumption is referred to as the Thermal Design Power (TDP). TDP is the target power level to which the thermal solutions should be designed. TDP is not the maximum power that the chipset can dissipate.

For TDP specifications, see Table 3-1for the Intel® 5000P chipset MCH, Table 3-2for the Intel® 5000V chipset MCH, and Table 3-3for the Intel® 5000X chipset MCH. FC- BGA packages have poor heat transfer capability into the board and have minimal thermal capability without thermal solution. Intel recommends that system designers plan for a heatsink when using Intel 5000 Series chipset.

3.2Case Temperature

To ensure proper operation and reliability of the Intel 5000 Series chipset MCH, the case temperatures must be at or between the maximum/minimum operating temperature ranges as specified in Table 3-1through Table 3-3. System and/or component level thermal solutions are required to maintain these temperature specifications. Refer to Chapter 5, “Thermal Metrology” for guidelines on accurately measuring package case temperatures.

Table 3-1. Intel® 5000P Chipset MCH Thermal Specifications

Parameter	Value	Notes
Tcase_max	105°C
Tcase_min	5°C
TDPwith 1 active memory channel	24.7 W
TDPwith 2 active memory channel	26.4 W
TDPwith 4 active memory channel	30.0 W

Note: These specifications are based on preliminary silicon characterization, however, they may be updated as further data becomes available.

Table 3-2. Intel® 5000V Chipset MCH Thermal Specifications

Parameter	Value	Notes
Tcase_max	105°C
Tcase_min	5°C
TDPwith 1 active memory channel	23.4 W
TDPwith 2 active memory channel	25.1 W

Note: These specifications are based on preliminary silicon characterization; however, they may be updated as further data becomes available.

Intel® 631xESB/632xESB I/O Controller Hub Thermal Mechanical Design Guide 13