Cypress CY7C1314AV18, CY7C1312AV18, CY7C1310AV18 manual Application Example1, Dll, Rps Wps

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CY7C1310AV18

CY7C1312AV18

PRELIMINARYCY7C1314AV18

Depth Expansion

The CY7C1312AV18 has a Port Select input for each port. This allows for easy depth expansion. Both Port Selects are sampled on the rising edge of the Positive Input Clock only (K). Each port select input can deselect the specified port. Deselecting a port will not affect the other port. All pending transactions (Read and Write) will be completed prior to the device being deselected.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175and 350, with VDDQ = 1.5V.The output impedance is adjusted every 1024 cycles upon powerup to account for drifts in supply voltage and temperature.

Application Example[1]

Echo Clocks

Echo clocks are provided on the QDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free-running clocks and are synchronized to the output clock(C/C) of the QDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table.

DLL

These chips utilize a Delay Lock Loop (DLL) that is designed to function between 80 MHz and the specified maximum clock frequency. The DLL may be disabled by applying ground to the DOFF pin. The DLL can also be reset by slowing the cycle time of input clocks K and K to greater than 30 ns.

\

 

 

 

 

SRAM #1

R = 250ohms

 

SRAM #4

ZQ R = 250ohms

 

 

 

 

R W

 

 

ZQ

 

R W

 

 

 

Vt

 

B

 

CQ/CQ#

 

B

CQ/CQ#

 

 

 

D

P P

W

 

Q

D

P P

W

Q

 

 

 

S S

S

 

S S

S

 

 

R

 

 

 

 

 

 

 

A

# # #

C C# K K#

A

# # #

C C# K K#

 

 

DATA IN

 

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

 

Vt

 

 

 

 

Address

 

 

 

 

 

 

Vt

 

 

 

 

RPS#

 

 

 

 

 

 

R

 

 

BUS

 

 

 

 

 

 

 

 

 

 

 

WPS#

 

 

 

 

 

 

 

 

 

MASTER

 

 

 

 

 

 

 

 

 

BWS#

 

 

 

 

 

 

 

 

 

(CPU

 

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN#

 

 

 

 

 

 

 

 

 

or

 

Source K

 

 

 

 

 

 

 

 

 

ASIC)

 

 

 

 

 

 

 

 

 

 

 

Source K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delayed K

 

 

 

 

 

 

 

 

 

 

 

Delayed K#

 

 

 

 

 

 

 

 

 

 

 

R

R = 50ohms

Vt = Vddq/2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Truth Table[ 2, 3, 4, 5, 6, 7]

Operation

K

RPS

 

 

WPS

DQ

DQ

Write Cycle:

L-H

X

 

 

L

D(A + 0)at K(t)

D(A + 1) at

 

 

 

 

K(t)

Load address on the rising edge of

K

clock; input write data

 

 

 

 

 

 

 

 

 

 

 

on K and K rising edges.

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

 

 

X

Q(A + 0) at

 

 

Q(A + 1) at C(t + 2)

 

 

C(t + 1)

Load address on the rising edge of K clock; wait one and a

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on C and C rising edges.

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D=X

D=X

 

 

 

 

 

 

 

 

Q=High-Z

Q=High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Notes:

1.The above application shows 4 QDRII being used.

2.X = “Don't Care,” H = Logic HIGH, L= Logic LOW, represents rising edge.

3.Device will power-up deselected and the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A+00, A+01 represents the internal address sequence in the burst.

5.“t” represents the cycle at which a read/write operation is started. t+1 and t+2 are the first and second clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved.

Document #: 38-05497 Rev. *A

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Contents Functional Description FeaturesConfigurations Logic Block Diagram CY7C1310AV18167 MHz 133 MHz Unit Logic Block Diagram CY7C1312AV18Logic Block Diagram CY7C1314AV18 Selection GuideVSS Pin ConfigurationsTMS TDI WPS Pin DefinitionsPin Name Pin Description OperationsTDO for Jtag Negative Output Clock InputNegative Input Clock Input Is referenced with respect toIntroduction DLL Application Example1RPS WPS BWS Write Cycle Descriptions CY7C1314AV18 2Comments Operating Range DC Electrical Characteristics Over the Operating Range9,14AC Electrical Characteristics Over the Operating Range Maximum RatingsThermal Resistance20 Switching Characteristics Over the Operating Range 16,17Input Capacitance TA = 25C, f = 1 MHz VDD = Capacitance20AC Test Loads and Waveforms Parameter Description Test Conditions Max UnitRead/Write/Deselect Sequence PreliminaryIdcode Ieee 1149.1 Serial Boundary Scan JtagExtest Sample ZSAMPLE/PRELOAD BypassEXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram24Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramTAP Timing and Test Conditions27 TAP AC Switching Characteristics Over the Operating Range26Parameter Description Min Max Unit Boundary Scan Order Identification Register DefinitionsScan Register Sizes Instruction Codes10F Ordering Information Package DiagramVBL Document HistoryREV DIM