Cypress CY7C1425AV18 manual Features, Functional Description, Configurations, Selection Guide

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CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18

36-Mbit QDR™-II SRAM 2-Word Burst Architecture

Features

Separate independent read and write data ports

Supports concurrent transactions

250 MHz clock for high bandwidth

2-word burst on all accesses

Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 500 MHz) at 250 MHz

Two input clocks (K and K) for precise DDR timing

SRAM uses rising edges only

Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

Echo clocks (CQ and CQ) simplify data capture in high-speed systems

Single multiplexed address input bus latches address inputs for both read and write ports

Separate port selects for depth expansion

Synchronous internally self-timed writes

Available in x8, x9, x18, and x36 configurations

Full data coherency, providing most current data

Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD

Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

Offered in both Pb-free and non Pb-free packages

Variable drive HSTL output buffers

JTAG 1149.1 compatible test access port

Delay Lock Loop (DLL) for accurate data placement

Functional Description

The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus. The read address is latched on the rising edge of the K clock and the write address is latched on the rising edge of the K clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are provided with DDR interfaces. Each address location is associated with two 8-bit words (CY7C1410AV18), 9-bit words (CY7C1425AV18), 18-bit words (CY7C1412AV18), or 36-bit words (CY7C1414AV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds.”

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Configurations

CY7C1410AV18 – 4M x 8

CY7C1425AV18 – 4M x 9

CY7C1412AV18 – 2M x 18

CY7C1414AV18 – 1M x 36

Selection Guide

Description

 

250 MHz

200 MHz

167 MHz

Unit

Maximum Operating Frequency

 

250

200

167

MHz

 

 

 

 

 

 

Maximum Operating Current

x8

800

700

620

mA

 

 

 

 

 

 

 

x9

800

700

620

 

 

 

 

 

 

 

 

x18

850

725

650

 

 

 

 

 

 

 

 

x36

1000

850

740

 

 

 

 

 

 

 

Cypress Semiconductor Corporation • 198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document #: 38-05615 Rev. *E

 

 

Revised June 13, 2008

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1410AV18Doff Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1410AV18 4M x CY7C1425AV18 4M xWPS BWS CY7C1412AV18 2M xCY7C1414AV18 1M x Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks Sram #1Write Cycle Descriptions Truth TableRPS WPS BWS0 BWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Switching CharacteristicsParameter Min Max DLL TimingWrite Read Switching WaveformsWrite NOP Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Document HistorySYT NXRWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.