Cypress CY7C1410AV18 manual Logic Block Diagram CY7C1412AV18, Logic Block Diagram CY7C1414AV18

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CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Logic Block Diagram (CY7C1412AV18)

D[17:0]

A(19:0)

DOFF

VREF

WPS

BWS[1:0]

Address Register

CLK

Gen.

Control

Logic

	Write	Write
	Reg	Reg
Write Add. Decode	1M x 18 Array	1M x 18 Array
	Read Data Reg.
		36
		18
		18

Read Add. Decode

Reg.

Address Register

Control

Logic

Reg.

20 A(19:0)

RPS

18 CQ

18	18	Q[17:0]

Logic Block Diagram (CY7C1414AV18)

D[35:0]

19Address

A(18:0) Register

K CLK

Gen.

DOFF

VREF		Control

WPS
		Logic

BWS
	[3:0]

Write Add. Decode

Write

Reg

512K x

Decode

36 Array

Read Add.

Read Data Reg.

Reg.

Address Register

Control

Logic

Reg.

19 A(18:0)

RPS

36 CQ

36	36	Q[35:0]

Document #: 38-05615 Rev. *E

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Contents Selection Guide FeaturesConfigurations Functional DescriptionLogic Block Diagram CY7C1410AV18 Logic Block Diagram CY7C1425AV18Doff Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18CY7C1425AV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1410AV18 4M xCY7C1412AV18 2M x WPS BWSCY7C1414AV18 1M x Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Sram #1 Application ExampleProgrammable Impedance Echo ClocksBWS0 BWS1 Truth TableWrite Cycle Descriptions RPS WPSBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderPower Up Sequence in QDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitDLL Timing Switching CharacteristicsCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Parameter Min MaxSwitching Waveforms Write ReadWrite NOP Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramNXR Document HistoryREV ECN no Submission ORIG. Description of Change Date SYTSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.