Cypress CY7C1412AV18, CY7C1410AV18 manual Switching Characteristics, Parameter Min Max, DLL Timing

Page 23

CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Switching Characteristics

Over the Operating Range [20, 21]

 

Cypress

Consortium

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Description

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

Min

Max

Min

Max

t

POWER

 

V (Typical) to the First Access [22]

1

 

1

 

1

 

ms

 

 

DD

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

4.0

8.4

5.0

8.4

6.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) HIGH

1.6

–

2.0

–

2.4

–

ns

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) LOW

1.6

–

2.0

–

2.4

–

ns

tKHKH

tKHKH

K Clock Rise to

 

 

Clock Rise and C to

 

Rise

1.8

–

2.2

–

2.7

–

ns

K

C

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

Clock Rise to C/C Clock Rise (rising edge to rising edge)

0

1.8

0

2.2

0

2.7

ns

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to (K/K)

 

 

Clock Rise

0.35

–

0.4

–

0.5

–

ns

tSC

tIVKH

Control Setup to K Clock Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.35

–

0.4

–

0.5

–

ns

(RPS,

WPS)

tSCDDR

tIVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DDR Control Setup to Clock (K/K)

 

 

Rise

0.35

–

0.4

–

0.5

–

ns

 

 

 

(BWS0, BWS1, BWS3, BWS4)

 

 

 

 

 

 

 

tSD [23]

tDVKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.35

–

0.4

–

0.5

–

ns

D[X:0] Setup to Clock (K/K)

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after (K/K)

 

Clock Rise

0.35

–

0.4

–

0.5

–

ns

tHC

tKHIX

Control Hold after K Clock Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

0.35

–

0.4

–

0.5

–

ns

(RPS,

WPS)

tHCDDR

tKHIX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock

 

 

 

 

 

 

 

Rise

0.35

–

0.4

–

0.5

–

ns

DDR Control Hold after

(K/K)

 

 

 

(BWS0, BWS1, BWS3, BWS4)

 

 

 

 

 

 

 

tHD

tKHDX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.35

–

0.4

–

0.5

–

ns

D[X:0] Hold after Clock (K/K)

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K

in Single Clock Mode) to Data Valid

–

0.45

–

0.45

–

0.50

ns

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Rise

–0.45

–

–0.45

–

–0.50

–

ns

Data Output Hold after Output C/C

 

 

 

(Active to Active)

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

 

Clock Rise to Echo Clock Valid

–

0.45

–

0.45

–

0.50

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Rise

–0.45

–

–0.45

–

–0.50

–

ns

Echo Clock Hold after C/C

tCQD

tCQHQV

Echo Clock High to Data Valid

–

0.30

–

0.35

–

0.40

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.30

–

–0.35

–

–0.40

–

ns

tCHZ

tCHQZ

 

 

 

 

 

Rise to High-Z (Active to High-Z) [24, 25]

 

 

 

 

 

 

 

Clock (C/C)

–

0.45

–

0.45

–

0.50

ns

tCLZ

tCHQX1

 

 

 

 

 

Rise to Low-Z [24, 25]

 

 

 

 

 

 

 

Clock (C/C)

–0.45

–

–0.45

–

–0.50

–

ns

DLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

–

0.20

–

0.20

–

0.20

ns

tKC lock

tKC lock

DLL Lock Time (K, C)

1024

–

1024

–

1024

–

Cycles

tKC Reset

tKC Reset

K Static to DLL Reset

30

 

30

 

30

 

ns

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being operated and outputs data with the output timings of that frequency range.

22.This part has a voltage regulator internally; tPOWER is the time that the power is supplied above VDD minimum initially before a read or write operation can be initiated.

23.For D2 data signal on CY7C1425AV18 device, tSD is 0.5 ns for 200 MHz, and 250 MHz frequencies.

24.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms on page 22. Transition is measured ± 100 mV from steady state voltage.

25.At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document #: 38-05615 Rev. *E

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Contents Selection Guide FeaturesConfigurations Functional DescriptionDoff Logic Block Diagram CY7C1410AV18Logic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18CY7C1425AV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1410AV18 4M xCY7C1414AV18 1M x CY7C1412AV18 2M xWPS BWS Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Sram #1 Application ExampleProgrammable Impedance Echo ClocksBWS0 BWS1 Truth TableWrite Cycle Descriptions RPS WPSBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitDLL Timing Switching CharacteristicsCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Parameter Min MaxWrite NOP Switching WaveformsWrite Read Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramNXR Document HistoryREV ECN no Submission ORIG. Description of Change Date SYTUSB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.
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