Cypress CY7C1410AV18, CY7C1425AV18, CY7C1414AV18 manual Switching Waveforms, Write Read, Write NOP

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CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [26, 27, 28]

READ	WRITE	READ	WRITE	READ	WRITE	NOP
1	2	3	4	5	6	7

WRITE NOP

tKH

RPS

WPS

AA0 tSA

tKL

tCYC

tKHKH

tSC	tHC
A2	A3
tSA tHA

D D10	D11		D30
			tSD
Q
			tCLZ
	tKHCH	tKL	tCO

D50

Q00

D51

tSD tHD

Q01 Q20

tDOH tCQDOH

D61

Q21 Q40

tCQD

Q41

tCHZ

CtKH

tKHCH	tKHKH	tCYC
tKHCH

tCCQO

tCQOH

tCCQO

tCQOH

CARE

UNDEFINED

Notes

26.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

27.Outputs are disabled (High-Z) one clock cycle after a NOP.

28.In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document #: 38-05615 Rev. *E

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Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1410AV18 Logic Block Diagram CY7C1425AV18Doff Logic Block Diagram CY7C1412AV18 Logic Block Diagram CY7C1414AV18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1410AV18 4M x CY7C1425AV18 4M xCY7C1412AV18 2M x WPS BWSCY7C1414AV18 1M x Pin Definitions Pin Name Pin DescriptionPower Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Programmable ImpedanceEcho Clocks Sram #1Truth Table Write Cycle DescriptionsRPS WPS BWS0 BWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTDI TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in QDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics Cypress Consortium Description 250 MHz 200 MHz 167 MHz UnitParameter Min Max DLL TimingSwitching Waveforms Write ReadWrite NOP Ordering Information 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History REV ECN no Submission ORIG. Description of Change DateSYT NXRSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.