Cypress CY7C1414AV18, CY7C1410AV18, CY7C1425AV18, CY7C1412AV18 manual TAP Controller State Diagram

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CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

TAP Controller State Diagram

The state diagram for the TAP controller follows. [9]

TEST-LOGIC RESET

TEST-LOGIC/ IDLE

1		1	1
1	SELECT	1	SELECT
	DR-SCAN		IR-SCAN
	0		0
	1		1

CAPTURE-DR		CAPTURE-IR
0		0
SHIFT-DR	0	SHIFT-IR	0
1		1
EXIT1-DR	1	EXIT1-IR	1
EXIT1-DR		EXIT1-IR
0		0
PAUSE-DR	0	PAUSE-IR	0
1		1
0		0
EXIT2-DR		EXIT2-IR
1		1
UPDATE-DR		UPDATE-IR
1		1
0		0

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document #: 38-05615 Rev. *E

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1410AV18Logic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1412AV18 Logic Block Diagram CY7C1414AV18CY7C1410AV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1425AV18 4M xCY7C1414AV18 1M x CY7C1412AV18 2M xWPS BWS Pin Definitions Pin Name Pin DescriptionReferenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance Sram #1RPS WPS Truth TableWrite Cycle Descriptions BWS0 BWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit DLL TimingWrite NOP Switching WaveformsWrite Read Ordering Information 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmSYT Document HistoryREV ECN no Submission ORIG. Description of Change Date NXRUSB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.