Cypress CY7C1412AV18 Referenced with Respect to, TDO for Jtag, TCK Pin for Jtag, TDI Pin for Jtag

Page 7

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18, CY7C1425AV18

 

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18, CY7C1414AV18

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

 

 

Pin Description

 

CQ

Echo Clock

 

CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock

 

 

 

 

 

 

for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings

 

 

 

 

 

 

for the echo clocks is shown in the Switching Characteristics on page 23.

 

 

 

 

Echo Clock

 

 

Referenced with Respect to

 

. This is a free - running clock and is synchronized to the Input clock

 

CQ

 

 

 

CQ

C

 

 

 

 

 

 

for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings

 

 

 

 

 

 

for the echo clocks is shown in the Switching Characteristics on page 23.

 

ZQ

Input

 

Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

 

 

 

 

 

 

impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected

 

 

 

 

 

 

between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

 

 

minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

 

 

 

 

Input

 

DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing

 

DOFF

 

 

 

 

 

 

in the DLL turned off operation differs from those listed in this data sheet.

 

TDO

Output

 

TDO for JTAG.

 

 

 

 

 

 

TCK

Input

 

TCK Pin for JTAG.

 

 

 

 

 

 

TDI

Input

 

TDI Pin for JTAG.

 

 

 

 

 

 

TMS

Input

 

TMS Pin for JTAG.

 

 

 

 

 

 

NC

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/72M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/144M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

NC/288M

N/A

 

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

 

VREF

Input-

 

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC

 

 

 

 

Reference

 

measurement points.

 

VDD

Power Supply

 

Power Supply Inputs to the Core of the Device.

 

VSS

Ground

 

Ground for the Device.

 

VDDQ

Power Supply

 

Power Supply Inputs for the Outputs of the Device.

Document #: 38-05615 Rev. *E

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Contents Selection Guide FeaturesConfigurations Functional DescriptionLogic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1410AV18Doff Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18CY7C1425AV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1410AV18 4M xWPS BWS CY7C1412AV18 2M xCY7C1414AV18 1M x Pin Name Pin Description Pin DefinitionsTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Sram #1 Application ExampleProgrammable Impedance Echo ClocksBWS0 BWS1 Truth TableWrite Cycle Descriptions RPS WPSBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitDLL Timing Switching CharacteristicsCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Parameter Min MaxWrite Read Switching WaveformsWrite NOP Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramNXR Document HistoryREV ECN no Submission ORIG. Description of Change Date SYTWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.
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