Cypress CY7C1410AV18, CY7C1425AV18 manual Maximum Ratings, DC Electrical Characteristics

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CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with Power Applied ..

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.3V

DC Input Voltage [11]

–0.5V to V + 0.3V

 

 

DD

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage (MIL-STD-883, M. 3015) . > 2001V

Latch-up Current

...................................................

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

VDD [15]

VDDQ [15]

Range

 

Temperature (TA)

Commercial

 

0°C to +70°C

1.8 ± 0.1V

1.4V to

 

 

 

 

VDD

Industrial

 

–40°C to +85°C

 

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

VDD

Power Supply Voltage

 

 

 

1.7

1.8

1.9

V

VDDQ

IO Supply Voltage

 

 

 

1.4

1.5

VDD

V

VOH

Output HIGH Voltage

Note 16

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 17

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = −0.1 mA, Nominal Impedance

 

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

 

VSS

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

VREF + 0.1

 

VDDQ + 0.3

V

VIL

Input LOW Voltage

 

 

 

–0.3

 

VREF – 0.1

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

 

−5

 

5

μA

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

 

−5

 

5

μA

VREF

Input Reference Voltage [18]

Typical Value = 0.75V

 

 

0.68

0.75

0.95

V

IDD [19]

VDD Operating Supply

VDD = Max,

250MHz

(x8)

 

 

800

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

800

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

850

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

200MHz

(x8)

 

 

700

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

700

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

725

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

850

 

 

 

 

 

 

 

 

 

 

 

 

 

167MHz

(x8)

 

 

620

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

620

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

650

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

740

 

 

 

 

 

 

 

 

 

 

Notes

15.Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

16.Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

17.Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

18.VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.

19.The operation current is calculated with 50% read cycle and 50% write cycle.

Document #: 38-05615 Rev. *E

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Contents Features ConfigurationsFunctional Description Selection GuideDoff Logic Block Diagram CY7C1410AV18Logic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1412AV18 Logic Block Diagram CY7C1414AV18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1410AV18 4M x CY7C1425AV18 4M xCY7C1414AV18 1M x CY7C1412AV18 2M xWPS BWS Pin Definitions Pin Name Pin DescriptionPower Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Programmable ImpedanceEcho Clocks Sram #1Truth Table Write Cycle DescriptionsRPS WPS BWS0 BWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTDI TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics Cypress Consortium Description 250 MHz 200 MHz 167 MHz UnitParameter Min Max DLL TimingWrite NOP Switching WaveformsWrite Read Ordering Information 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History REV ECN no Submission ORIG. Description of Change DateSYT NXRUSB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.
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