Cypress CY7C1414AV18 manual Truth Table, Write Cycle Descriptions, Rps Wps, BWS0 BWS1, NWS1

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CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Truth Table

The truth table for CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 follows. [2, 3, 4, 5, 6, 7]

Operation

K

RPS

 

 

WPS

DQ

DQ

Write Cycle:

 

 

L-H

X

 

 

L

D(A + 0) at K(t)

D(A + 1) at

 

 

 

 

K(t)

Load address on the rising edge of

K;

 

 

 

 

 

 

 

 

 

 

 

input write data on K and K rising edges.

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

 

 

X

Q(A + 0) at

 

 

Q(A + 1) at C(t + 2)

 

 

C(t + 1)

Load address on the rising edge of K;

 

 

 

 

 

 

 

 

 

 

 

wait one and a half cycle; read data on

C

and C rising edges.

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D = X

D = X

 

 

 

 

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Write Cycle Descriptions

The write cycle description table for CY7C1410AV18 and CY7C1412AV18 follows. [2, 8]

 

BWS0/

BWS1/

K

 

 

 

Comments

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

NWS0

 

NWS1

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

L

L-H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 both nibbles (D[7:0]) are written into the device.

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

H

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

L

 

H

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

H

 

L

L–H

 

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

L

L–H

During the data portion of a write sequence:

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1410AV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1412AV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

remains unaltered.

 

H

 

H

L–H

 

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

L–H

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.

5.“t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1,BWS0, BWS1,BWS2 and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.

Document #: 38-05615 Rev. *E

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1425AV18 Logic Block Diagram CY7C1410AV18Doff Logic Block Diagram CY7C1412AV18 Logic Block Diagram CY7C1414AV18CY7C1410AV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1425AV18 4M xWPS BWS CY7C1412AV18 2M xCY7C1414AV18 1M x Pin Definitions Pin Name Pin DescriptionReferenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance Sram #1RPS WPS Truth TableWrite Cycle Descriptions BWS0 BWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Switching CharacteristicsCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit DLL TimingWrite Read Switching WaveformsWrite NOP Ordering Information 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmSYT Document HistoryREV ECN no Submission ORIG. Description of Change Date NXRWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.