Cypress CY7C1425AV18, CY7C1410AV18, CY7C1414AV18, CY7C1412AV18 manual AC Electrical Characteristics

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CY7C1410AV18, CY7C1425AV18

CY7C1412AV18, CY7C1414AV18

Electrical Characteristics (continued)

DC Electrical Characteristics

Over the Operating Range [12]

Parameter	Description	Test Conditions			Min	Typ	Max	Unit
ISB1	Automatic Power down	Max VDD,	250MHz	(x8)			400	mA
	Current	Both Ports Deselected,
	Current	Both Ports Deselected,		(x9)			400
		VIN ≥ VIH or VIN ≤ VIL		(x9)			400

				(x18)			420
		f = fMAX = 1/tCYC,		(x18)			420
		Inputs Static		(x36)			475

			200MHz	(x8)			350	mA

				(x9)			350

				(x18)			370

				(x36)			420

			167MHz	(x8)			330	mA

				(x9)			330

				(x18)			345

				(x36)			390

AC Electrical Characteristics

Over the Operating Range [11]

Parameter	Description	Test Conditions	Min	Typ	Max	Unit
VIH	Input HIGH Voltage		VREF + 0.2	–	–	V
VIL	Input LOW Voltage		–	–	VREF – 0.2	V

Document #: 38-05615 Rev. *E

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1410AV18 Logic Block Diagram CY7C1425AV18Doff Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1410AV18 4M x CY7C1425AV18 4M xCY7C1412AV18 2M x WPS BWSCY7C1414AV18 1M x Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks Sram #1Write Cycle Descriptions Truth TableRPS WPS BWS0 BWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in QDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Switching CharacteristicsParameter Min Max DLL TimingSwitching Waveforms Write ReadWrite NOP Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Document HistorySYT NXRSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.