Cypress CY7C1425AV18 manual Application Example, Programmable Impedance, Echo Clocks, Sram #1

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CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature.

Echo Clocks

Echo clocks are provided on the QDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free-running clocks and are

synchronized to the output clock (C/C) of the QDR-II. In single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in the Switching Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. For information refer to the application note AN5062, DLL Considerations in QDRII/DDRII/QDRII+/DDRII+.

Application Example

 

 

 

 

 

 

 

 

 

 

Figure 1 shows two QDR-II used in an application.

 

 

 

 

 

 

 

 

 

 

 

Figure 1. Application Example

 

 

 

 

 

 

 

 

SRAM #1

ZQ

R = 250ohms

 

SRAM #2

ZQ

R = 250ohms

 

Vt

 

R W B

 

CQ/CQ#

 

R W B

 

CQ/CQ#

 

 

D

P P W

 

Q

D

P

P W

 

Q

 

 

 

 

 

 

 

 

S S S

 

S

S S

 

 

 

R

 

 

 

 

 

 

 

 

A

# # #

C C# K K#

A

# # #

C C# K K#

 

 

DATA IN

 

 

 

 

 

 

 

 

 

 

 

DATA OUT

 

 

 

 

 

Vt

 

 

 

 

 

Address

 

 

 

 

 

Vt

 

 

 

 

BUS

RPS#

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WPS#

 

 

 

 

 

 

 

 

 

 

MASTER

 

 

 

 

 

 

 

 

 

 

BWS#

 

 

 

 

 

 

 

 

 

 

(CPU

 

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN#

 

 

 

 

 

 

 

 

 

 

or

Source K

 

 

 

 

 

 

 

 

 

 

ASIC)

 

 

 

 

 

 

 

 

 

 

Source K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delayed K

 

 

 

 

 

 

 

 

 

 

 

Delayed K#

 

 

 

 

 

 

 

 

 

 

 

R

R = 50ohms

Vt = Vddq/2

 

 

 

 

 

 

 

Document #: 38-05615 Rev. *E

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1410AV18 Logic Block Diagram CY7C1425AV18Doff Logic Block Diagram CY7C1414AV18 Logic Block Diagram CY7C1412AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1410AV18 4M x CY7C1425AV18 4M xCY7C1412AV18 2M x WPS BWSCY7C1414AV18 1M x Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks Sram #1Write Cycle Descriptions Truth TableRPS WPS BWS0 BWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in QDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitCypress Consortium Description 250 MHz 200 MHz 167 MHz Unit Switching CharacteristicsParameter Min Max DLL TimingSwitching Waveforms Write ReadWrite NOP Ordering Information 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Document HistorySYT NXRSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C1410AV18, CY7C1425AV18, CY7C1414AV18, CY7C1412AV18 specifications

Cypress Semiconductor, a prominent player in the semiconductor industry, offers a robust lineup of synchronous Static Random Access Memory (SRAM) products, including the CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18. These memory chips are designed for high-performance applications, showcasing significant advancements in speed, density, and power efficiency.

The CY7C1412AV18 is a 1.2 Megabit SRAM with a 2.5V operating voltage. It boasts a maximum access time of 12 nanoseconds, specifically engineered for applications requiring fast data processing. This chip is particularly well-suited for networking and telecommunications applications where quick data retrieval is essential.

Next in the lineup, the CY7C1414AV18 offers a 1.44 Megabit capacity with a similar operating voltage and access time. This model's increased density allows for more data storage while maintaining performance levels, making it an excellent choice for automotive and industrial applications that demand reliability and speed.

Moreover, the CY7C1425AV18 is a more advanced solution with a 2 Megabit capacity. It integrates innovative features such as pipelined architecture, which enhances throughput and minimizes latency, making it ideal for high-speed processing applications like video and image processing in various electronic devices.

Lastly, the CY7C1410AV18 rounds out the series with a 1 Megabit capacity and is tailored for critical applications where space and power consumption are constraints. Its low power consumption makes it increasingly suitable for battery-operated devices, contributing to energy efficiency and extended operational life.

Each of these memory chips incorporates Cypress's advanced technology, including CMOS (Complementary Metal-Oxide-Semiconductor) fabrication processes, which ensures high performance while maintaining low static and dynamic power consumption. The SRAMs are designed with a 3.3V data interface, ensuring compatibility with modern digital systems.

In summary, Cypress's CY7C1412AV18, CY7C1414AV18, CY7C1425AV18, and CY7C1410AV18 SRAM chips stand out with their high access speeds, low power consumption, and varying capacities. These components are optimized for a wide range of applications, including networking, automotive, and consumer electronics, confirming Cypress's commitment to delivering cutting-edge memory solutions to meet the evolving demands of the electronics industry.
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