CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the device. For user guidelines, not tested.
Storage Temperature | ||
Ambient Temperature with |
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|
Power Applied | ||
Supply Voltage on VDD Relative to GND | ||
Supply Voltage on VDDQ Relative to GND | ||
DC Voltage Applied to Outputs | ||
in |
DC Input Voltage | |
Current into Outputs (LOW) | 20 mA |
Static Discharge Voltage | > 2001V |
(per |
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> 200 mA |
Operating Range
Range | Ambient | VDD | VDDQ |
Temperature | |||
Commercial | 0°C to +70°C | 3.3V | 2.5V – 5% |
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| to VDD |
Industrial |
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Electrical Characteristics
Over the Operating Range [17, 18]
Parameter | Description | Test Conditions | Min | Max | Unit | ||
VDD | Power Supply Voltage |
|
| 3.135 | 3.6 | V | |
VDDQ | IO Supply Voltage | for 3.3V IO |
| 3.135 | VDD | V | |
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| for 2.5V IO |
| 2.375 | 2.625 | V |
VOH | Output HIGH Voltage | for 3.3V IO, IOH = |
| 2.4 |
| V | |
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|
| for 2.5V IO, IOH = |
| 2.0 |
| V |
VOL | Output LOW Voltage | for 3.3V IO, IOL = 8.0 mA |
|
| 0.4 | V | |
|
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| for 2.5V IO, IOL = 1.0 mA |
|
| 0.4 | V |
V | IH | Input HIGH Voltage [17] | for 3.3V IO |
| 2.0 | V + 0.3V | V |
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| DD |
| |
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| for 2.5V IO |
| 1.7 | VDD + 0.3V | V |
VIL | Input LOW Voltage [17] | for 3.3V IO |
| 0.8 | V | ||
|
|
| for 2.5V IO |
| 0.7 | V | |
IX | Input Leakage Current | GND ≤ VI ≤ VDDQ |
| 5 | ∝A | ||
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| except ZZ and MODE |
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| Input Current of MODE | Input = VSS |
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| ∝A | |
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| Input = VDD |
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| 5 | ∝A |
|
| Input Current of ZZ | Input = VSS |
|
| ∝A | |
|
|
| Input = VDD |
|
| 30 | ∝A |
IOZ | Output Leakage Current | GND ≤ VI ≤ VDDQ, Output Disabled |
| 5 | ∝A | ||
IDD | VDD Operating Supply | VDD = Max., IOUT = 0 mA, |
| 350 | mA | ||
|
| Current | f = fMAX = 1/tCYC |
| 300 | mA | |
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|
| 275 | mA | |
ISB1 | Automatic CE | VDD = Max, Device Deselected, |
| 160 | mA | ||
|
| Power Down | VIN ≥ VIH or VIN ≤ VIL |
| 150 | mA | |
|
| f = fMAX = 1/tCYC |
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| 140 | mA | |||
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ISB2 | Automatic CE | VDD = Max, Device Deselected, | All speeds |
| 70 | mA | |
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| Power Down | VIN ≤ 0.3V or VIN > VDDQ – 0.3V, |
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| f = 0 |
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ISB3 | Automatic CE | VDD = Max, Device Deselected, or |
| 135 | mA | ||
|
| Power Down | VIN ≤ 0.3V or VIN > VDDQ – 0.3V |
| 130 | mA | |
|
| f = fMAX = 1/tCYC |
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| 125 | mA | |||
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ISB4 | Automatic CE | VDD = Max, Device Deselected, | All Speeds |
| 80 | mA | |
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| Power Down | VIN ≥ VIH or VIN ≤ VIL, f = 0 |
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Notes
17.Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2), undershoot: VIL(AC) >
18.TPower up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document Number: | Page 18 of 30 |
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