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Chapter 3 – Electrical Characteristics
3.3V Parallel – Standard (SMI) and Industrial Temperature
Electrical characteristics for Parallel MT5634SMI SocketModem devices are presented below. 3.3 Vdc Characteristics (TA =
Digital Inputs | Input High | Input Low |
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Min 2.52 V | Max 0.9 V |
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Digital Inputs (hysteresis input buffer) | Input High | Input Low |
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A0 (31), A1 (25), A2 (34), | Min 2.52 V | Max 0.9 V |
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Digital Input/Output | Input High | Input Low |
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Output buffer can source 12 mA at 0.4 V |
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DO (37), D1 (38), D2 (29), D3 (39), D4 (35), D5 (36), D6 | Min 2.52 V | Max 0.9 V |
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(41), D7 (27) |
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Digital Output | Output High | Output Low | Current Drive |
INT (30) | Min 2.3 V | Max 0.4 V | 2 ma |
Digital Input Capacitance |
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| 5 PF |
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Timing Requirements
Timing Requirements for Parallel Write
Parameter | Min | Max | Unit |
10 | - | ns | |
A0, A1, A2 to | 15 | - | ns |
40 | - | ns | |
30 | - | ns | |
0 | - | ns | |
0 | - | ns | |
0 | - | ns | |
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|
| |
10 | - | ns | |
MIMIC Accesses | 110 | - | ns |
Timing Requirements for Parallel Read
Parameter | Min | Max | Unit |
10 | - | ns | |
A0, A1, A2 to | 15 | - | ns |
40 | - | ns | |
0 | - | ns | |
0 | - | ns | |
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|
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10 | - | ns | |
MIMIC Accesses | 110 | - | ns |
Handling Precautions
All MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. Although input protection circuitry has been incorporated into the devices to minimize the effect of this static buildup, proper precautions should be taken to avoid exposure to electrostatic discharge during handling and mounting.
SocketModem Global MT5634SMI Developer’s Guide | 15 |