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| CY7C1347G | ||||
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Switching Characteristics |
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Over the Operating Range[14, 15] |
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Parameter |
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| Description | Unit |
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| Min | Max | Min | Max | Min | Max | Min | Max |
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tPOWER |
| V (Typical) to the first Access[10] | 1 |
| 1 |
| 1 |
| 1 |
| ms |
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| DD |
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Clock |
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tCYC |
| Clock Cycle Time | 4.0 |
| 5.0 |
| 6.0 |
| 7.5 |
| ns |
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tCH |
| Clock HIGH | 1.7 |
| 2.0 |
| 2.5 |
| 3.0 |
| ns |
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tCL |
| Clock LOW | 1.7 |
| 2.0 |
| 2.5 |
| 3.0 |
| ns |
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Output Times |
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tCO |
| Data Output Valid After CLK Rise |
| 2.6 |
| 2.8 |
| 3.5 |
| 4.0 | ns |
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tDOH |
| Data Output Hold After CLK Rise | 1.0 |
| 1.0 |
| 1.5 |
| 1.5 |
| ns |
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tCLZ |
| Clock to | 0 |
| 0 |
| 0 |
| 0 |
| ns |
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tCHZ |
| Clock to |
| 2.6 |
| 2.8 |
| 3.5 |
| 4.0 | ns |
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tOEV |
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| LOW to Output Valid |
| 2.6 |
| 2.8 |
| 3.5 |
| 4.5 | ns |
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OE |
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tOELZ |
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| LOW to Output | 0 |
| 0 |
| 0 |
| 0 |
| ns |
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OE |
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tOEHZ |
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| HIGH to Output |
| 2.6 |
| 2.8 |
| 3.5 |
| 4.0 | ns |
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OE |
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Setup Times |
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tAS |
| Address Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
| ns |
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tADS |
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| Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
| ns |
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ADSC, | ADSP |
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tADVS |
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| Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
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ADV |
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tWES |
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| Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
| ns |
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GW, | BWE, | BW |
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tDS |
| Data Input Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
| ns |
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tCES |
| Chip Enable Setup Before CLK Rise | 1.2 |
| 1.2 |
| 1.5 |
| 1.5 |
| ns |
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Hold Times |
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tAH |
| Address Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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tADH |
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| Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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ADSP, | ADSC |
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tADVH |
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| Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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ADV |
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tWEH |
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| Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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GW, | BWE, | BW |
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| X |
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tDH |
| Data Input Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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tCEH |
| Chip Enable Hold After CLK Rise | 0.3 |
| 0.5 |
| 0.5 |
| 0.5 |
| ns |
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Notes
10.This part has an internal voltage regulator; tPOWER is the time that the power must be supplied above VDD(min) initially before a read or write operation can be initiated.
11.tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms on page 10. Transition is measured ±200 mV from
12.At any voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
13.This parameter is sampled and not 100% tested.
14.Timing references level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V on all data sheets.
15.Test conditions shown in (a) of AC Test Loads and Waveforms on page 10 unless otherwise noted.
Document #: | Page 11 of 22 |
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