Maximum Ratings, Operating Range | Cypress CY7C1472V25, CY7C1470V25

CY7C1470V25

CY7C1472V25

CY7C1474V25

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to +VDD
DC to Outputs in Tri-State	–0.5V to VDDQ + 0.5V
DC Input Voltage	–0.5V to VDD + 0.5V

Current into Outputs (LOW)			20 mA
Static Discharge Voltage			> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current			> 200 mA
Operating Range

	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	2.5V –5%/+5%	1.7V to VDD
Industrial	–40°C to +85°C

Electrical Characteristics Over the Operating Range[12, 13]

Parameter	Description	Test Conditions		Min.	Max.	Unit
VDD	Power Supply Voltage			2.375	2.625	V
VDDQ	I/O Supply Voltage	for 2.5V I/O		2.375	VDD	V
		for 1.8V I/O		1.7	1.9	V

VOH	Output HIGH Voltage	for 2.5V I/O, IOH= −1.0 mA		2.0		V
		for 1.8V I/O, IOH = –100 ∝A		1.6		V
VOL	Output LOW Voltage	for 2.5V I/O, IOL= 1.0 mA			0.4	V
		for 1.8V I/O, IOL= 100 ∝A			0.2	V
VIH	Input HIGH Voltage[12]	for 2.5V I/O		1.7	VDD + 0.3V	V
		for 1.8V I/O		1.26	VDD + 0.3V	V
VIL	Input LOW Voltage[12]	for 2.5V I/O		–0.3	0.7	V
		for 1.8V I/O		–0.3	0.36	V

IX	Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
	except ZZ and MODE
	Input Current of MODE	Input = VSS		–30		∝A
		Input = VDD			5	∝A
	Input Current of ZZ	Input = VSS		–5		∝A
		Input = VDD			30	∝A
IOZ	Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled		–5	5	∝A
IDD	VDD Operating Supply	VDD = Max., IOUT = 0 mA,	4.0-ns cycle, 250 MHz		450	mA
		f = fMAX = 1/tCYC
		f = fMAX = 1/tCYC	5.0-ns cycle, 200 MHz		450	mA
			6.0-ns cycle, 167 MHz		400	mA

ISB1	Automatic CE	Max. VDD, Device Deselected,	4.0-ns cycle, 250MHz		200	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL,
	Power-down	VIN ≥ VIH or VIN ≤ VIL,	5.0-ns cycle, 200 MHz		200	mA
	Current—TTL Inputs	f = fMAX = 1/tCYC
	Current—TTL Inputs	f = fMAX = 1/tCYC	6.0-ns cycle, 167 MHz		200	mA
			6.0-ns cycle, 167 MHz		200	mA

ISB2	Automatic CE	Max. VDD, Device Deselected,	All speed grades		120	mA
	Power-down	VIN ≤ 0.3V or
	Current—CMOS Inputs	VIN > VDDQ − 0.3V, f = 0
ISB3	Automatic CE	Max. VDD, Device Deselected,	4.0-ns cycle, 250 MHz		200	mA
	Power-down	VIN ≤ 0.3V or
	Power-down	VIN ≤ 0.3V or	5.0-ns cycle, 200 MHz		200	mA
	Current—CMOS Inputs	VIN > VDDQ − 0.3V,
	Current—CMOS Inputs	VIN > VDDQ − 0.3V,	6.0-ns cycle, 167 MHz		200	mA
		f = fMAX = 1/tCYC	6.0-ns cycle, 167 MHz		200	mA
ISB4	Automatic CE	Max. VDD, Device Deselected,	All speed grades		135	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = 0
	Current—TTL Inputs

Notes:

12.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

13.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05290 Rev. *I

Page 17 of 28

[+] Feedback

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.

Cypress CY7C1472V25, CY7C1470V25, CY7C1474V25 manual Maximum Ratings, Operating Range, Ambient Range

Models: CY7C1474V25 CY7C1470V25 CY7C1472V25

Maximum Ratings

Operating Range

Ambient

Range

Electrical Characteristics Over the Operating Range[12, 13]

Parameter

Power-down

VIN ≥ VIH or VIN ≤ VIL, f = 0

Current—TTL Inputs

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications