CY7C1470V25

 

 

 

 

 

 

 

 

 

 

 

CY7C1472V25

 

 

 

 

 

 

 

 

 

 

 

CY7C1474V25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

Pin Name

I/O Type

Pin Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Advance/Load Input used to advance the on-chip address counter or load a new address.

 

 

ADV/LD

 

 

 

 

 

 

 

 

 

Synchronous

When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a

 

 

 

 

 

 

 

 

 

 

 

new address can be loaded into the device for an access. After being deselected, ADV/LD should

 

 

 

 

 

 

 

 

 

 

 

be driven LOW in order to load a new address.

 

 

CLK

Input-

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with

 

 

CEN.

 

 

 

 

 

 

 

 

Clock

CLK is only recognized if CEN is active LOW.

 

 

 

1

 

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select/deselect the device.

 

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device.

 

 

 

3

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

CE

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device.

 

 

 

 

 

 

Input-

Output Enable, active LOW. Combined with the synchronous logic block inside the device to

 

 

OE

 

 

 

 

 

 

 

 

Asynchronous

control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.

 

 

 

 

 

 

 

 

 

 

 

When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during

 

 

 

 

 

 

 

 

 

 

 

the data portion of a write sequence, during the first clock when emerging from a deselected state

 

 

 

 

 

 

 

 

 

 

 

and when the device has been deselected.

 

 

 

 

 

 

Input-

Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the

 

 

CEN

 

 

 

 

 

 

 

 

Synchronous

SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not

 

 

 

 

 

 

 

 

 

 

 

deselect the device, CEN can be used to extend the previous cycle when required.

 

 

DQs

I/O-

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered

 

 

 

 

 

 

 

 

Synchronous

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

 

 

 

 

 

 

 

 

 

 

 

specified by A[18:0] during the previous clock rise of the read cycle. The direction of the pins is

 

 

 

 

 

 

 

 

 

 

 

controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave

 

 

 

 

 

 

 

 

 

 

 

as outputs. When HIGH, DQa–DQhare placed in a tri-state condition. The outputs are automat-

 

 

 

 

 

 

 

 

 

 

 

ically tri-stated during the data portion of a write sequence, during the first clock when emerging

 

 

 

 

 

 

 

 

 

 

 

from a deselected state, and when the device is deselected, regardless of the state of OE.

 

 

DQPX

I/O-

Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQ[71:0]. During

 

 

 

 

 

 

 

 

Synchronous

write sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by

 

 

 

 

 

 

 

 

 

 

 

BWc, and DQPd is controlled by BWd, DQPe is controlled by BWe, DQPf is controlled by BWf,

 

 

 

 

 

 

 

 

 

 

 

DQPg is controlled by BWg, DQPh is controlled by BWh.

 

 

MODE

Input Strap Pin

Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.

 

 

 

 

 

 

 

 

 

 

 

Pulled LOW selects the linear burst order. MODE should not change states during operation.

 

 

 

 

 

 

 

 

 

 

 

When left floating MODE will default HIGH, to an interleaved burst order.

 

 

TDO

JTAG Serial

Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.

 

 

 

 

 

 

 

 

Output

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

 

 

 

 

 

 

TDI

JTAG Serial Input

Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.

 

 

 

 

 

 

 

 

Synchronous

 

 

 

 

 

 

TMS

Test Mode Select

This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK.

 

 

 

 

 

 

 

 

Synchronous

 

 

 

 

 

 

TCK

JTAG Clock

Clock input to the JTAG circuitry.

 

 

 

 

 

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

 

VDDQ

I/O Power Supply

Power supply for the I/O circuitry.

 

 

VSS

Ground

Ground for the device. Should be connected to ground of the system.

 

 

NC

No connects. This pin is not connected to the die.

 

 

 

 

 

 

 

NC(144M,

These pins are not connected. They will be used for expansion to the 144M, 288M, 576M and

 

 

288M,

 

 

 

1G densities.

 

 

576M, 1G)

 

 

 

 

 

 

 

 

 

ZZ

Input-

ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition

 

 

 

 

 

 

 

 

Asynchronous

with data integrity preserved. For normal operation, this pin has to be LOW or left floating.

 

 

 

 

 

 

 

 

 

 

 

ZZ pin has an internal pull-down.

Document #: 38-05290 Rev. *I

Page 6 of 28

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Cypress CY7C1470V25, CY7C1474V25 manual Clock input to the Jtag circuitry, Power supply inputs to the core of the device

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.