Cypress CY7C1474V25, CY7C1470V25 manual Switching Characteristics Over the Operating Range 15

Models: CY7C1474V25 CY7C1470V25 CY7C1472V25

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Switching Characteristics Over the Operating Range [15, 16]

CY7C1470V25

CY7C1472V25

CY7C1474V25

Switching Characteristics Over the Operating Range [15, 16]

 

 

 

 

 

 

 

 

 

 

–250

–200

–167

 

Parameter

 

 

 

 

 

 

 

 

Description

 

 

 

 

 

 

Unit

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

tPower[17]

 

VCC (typical) to the First Access Read or Write

1

 

1

 

1

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

4.0

 

5.0

 

6.0

 

ns

FMAX

 

Maximum Operating Frequency

 

250

 

200

 

167

MHz

tCH

 

Clock HIGH

2.0

 

2.0

 

2.2

 

ns

tCL

 

Clock LOW

2.0

 

2.0

 

2.2

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid After CLK Rise

 

3.0

 

3.0

 

3.4

ns

tOEV

 

 

 

LOW to Output Valid

 

3.0

 

3.0

 

3.4

ns

OE

 

 

tDOH

 

Data Output Hold After CLK Rise

1.3

 

1.3

 

1.5

 

ns

tCHZ

 

Clock to High-Z[18, 19, 20]

 

3.0

 

3.0

 

3.4

ns

tCLZ

 

Clock to Low-Z[18, 19, 20]

1.3

 

1.3

 

1.5

 

ns

tEOHZ

 

 

 

HIGH to Output High-Z[18, 19, 20]

 

3.0

 

3.0

 

3.4

ns

OE

 

 

tEOLZ

 

 

 

LOW to Output Low-Z[18, 19, 20]

0

 

0

 

0

 

ns

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tDS

 

Data Input Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tCENS

 

 

 

 

 

 

Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

CEN

 

 

tWES

 

 

 

 

 

 

 

x Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

WE,

BW

 

 

tALS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tCES

 

Chip Select Set-up

1.4

 

1.4

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

tDH

 

Data Input Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

tCENH

 

 

 

 

Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

CEN

 

 

tWEH

 

 

 

 

 

 

 

x Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

WE,

BW

 

 

tALH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Hold after CLK Rise

0.4

 

0.4

 

0.5

 

ns

tCEH

 

Chip Select Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

Notes:

15.Timing reference is 1.25V when VDDQ = 2.5V and 0.9V when VDDQ = 1.8V.

16.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

17.This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD minimum initially, before a Read or Write operation can be initiated.

18.tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

19.At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

20.This parameter is sampled and not 100% tested.

Document #: 38-05290 Rev. *I

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Cypress manual Switching Characteristics Over the Operating Range 15, CY7C1470V25 CY7C1472V25 CY7C1474V25