Cypress CY7C1475V25 manual Features, Functional Description1, Selection Guide, MHz 100 MHz Unit

CY7C1471V25

CY7C1473V25

CY7C1475V25

72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture

Features

•No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles

•Supports up to 133 MHz bus operations with zero wait states

•Data is transferred on every clock

•Pin compatible and functionally equivalent to ZBT™ devices

•Internally self timed output buffer control to eliminate the need to use OE

•Registered inputs for flow through operation

•Byte Write capability

•2.5V/1.8V IO supply (VDDQ)

•Fast clock-to-output times

— 6.5 ns (for 133-MHz device)

•Clock Enable (CEN) pin to enable clock and suspend operation

•Synchronous self timed writes

•Asynchronous Output Enable (OE)

•CY7C1471V25, CY7C1473V25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non-Pb-free 165-Ball FBGA package. CY7C1475V25 available in Pb-free and non-Pb-free 209-Ball FBGA package.

•Three Chip Enables (CE1, CE2, CE3) for simple depth expansion.

•Automatic power down feature available using ZZ mode or CE deselect.

•IEEE 1149.1 JTAG Boundary Scan compatible

•Burst Capability - linear or interleaved burst order

•Low standby power

Functional Description[1]

The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are 2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst SRAMs designed specifically to support unlimited true back-to-back read or write operations without the insertion of wait states. The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read or write operations with data transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions.

All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device).

Write operations are controlled by two or four Byte Write Select (BWX) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide easy bank selection and output tri-state control. To avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence.

Selection Guide

	133 MHz	100 MHz	Unit
Maximum Access Time	6.5	8.5	ns
Maximum Operating Current	305	275	mA
Maximum CMOS Standby Current	120	120	mA

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation	• 198 Champion Court • San Jose, CA 95134-1709	•	408-943-2600
Document #: 38-05287 Rev. *I		Revised July 04, 2007

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