CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *I Page 32 of 32
*H 472335 See ECN VKN Corrected the typo in the pin configuration for 209-Ball FBGA pinout
(Corrected the ball name for H9 to VSS from VSSQ).
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND.
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
*I 1274732 See ECN VKN/AESA Corrected typo in the “NOP, STALL and DESELECT Cycles” waveform
Document Title: CY7C1471V25/CY7C1473V25/CY7C1475V25, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
with NoBL™ Architecture
Document Number: 38-05287
REV. ECN NO. Issue
Date
Orig. of
Change Description of Change
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