CY7C1471V25

CY7C1473V25

CY7C1475V25

Switching Characteristics

Over the Operating Range. Timing reference level is 1.25V when VDDQ = 2.5V and is 0.9V when VDDQ = 1.8V. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 22 unless otherwise noted.

Parameter

 

 

 

 

 

 

 

 

Description

133 MHz

100 MHz

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPOWER

 

 

 

 

 

 

 

 

 

1

 

1

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

10

 

ns

tCH

 

Clock HIGH

2.5

 

3.0

 

ns

tCL

 

Clock LOW

2.5

 

3.0

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid After CLK Rise

 

6.5

 

8.5

ns

tDOH

 

Data Output Hold After CLK Rise

2.5

 

2.5

 

ns

t

 

Clock to Low-Z [16, 17, 18]

3.0

 

3.0

 

ns

CLZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

Clock to High-Z [16, 17, 18]

 

3.8

 

4.5

ns

CHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOEV

 

 

 

LOW to Output Valid

 

3.0

 

3.8

ns

OE

 

 

t

 

 

 

LOW to Output Low-Z [16, 17, 18]

0

 

0

 

ns

OE

 

 

OELZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

HIGH to Output High-Z [16, 17, 18]

 

3.0

 

4.0

ns

OE

 

 

OEHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Setup Before CLK Rise

1.5

 

1.5

 

ns

tALS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

 

Setup Before CLK Rise

1.5

 

1.5

 

ns

tWES

 

 

 

 

 

 

 

 

X Setup Before CLK Rise

1.5

 

1.5

 

ns

WE,

BW

 

 

tCENS

 

 

 

 

Setup Before CLK Rise

1.5

 

1.5

 

ns

CEN

 

 

tDS

 

Data Input Setup Before CLK Rise

1.5

 

1.5

 

ns

tCES

 

Chip Enable Setup Before CLK Rise

1.5

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.5

 

0.5

 

ns

tALH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Hold After CLK Rise

0.5

 

0.5

 

ns

tWEH

 

 

 

 

 

 

 

X Hold After CLK Rise

0.5

 

0.5

 

ns

WE,

BW

 

 

tCENH

 

 

 

 

Hold After CLK Rise

0.5

 

0.5

 

ns

CEN

 

 

tDH

 

Data Input Hold After CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold After CLK Rise

0.5

 

0.5

 

ns

Notes

15.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can be initiated.

16.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 22. Transition is measured ±200 mV from steady-state voltage.

17.At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions.

18.This parameter is sampled and not 100% tested.

Document #: 38-05287 Rev. *I

Page 23 of 32

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Cypress CY7C1471V25 manual Switching Characteristics, Parameter Description 133 MHz 100 MHz Unit Min, Setup Times, Cen