Cypress CY7C1176V18 manual Features, Functional Description, Configurations, Selection Guide

CY7C1161V18, CY7C1176V18

CY7C1163V18, CY7C1165V18

18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

Features

■Separate independent read and write data ports

❐Supports concurrent transactions

■300 MHz to 400 MHz clock for high bandwidth

■4-word burst to reduce address bus frequency

■Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 800 MHz) at 400 MHz

■Read latency of 2.5 clock cycles

■Two input clocks (K and K) for precise DDR timing

❐SRAM uses rising edges only

■Echo clocks (CQ and CQ) simplify data capture in high speed systems

■Single multiplexed address input bus latches address inputs for both read and write ports

■Separate port selects for depth expansion

■Data valid pin (QVLD) to indicate valid data on the output

■Synchronous internally self-timed writes

■Available in x8, x9, x18, and x36 configurations

■Full data coherency providing most current data

■Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]

■Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

■Offered in both Pb-free and non Pb-free packages

■Variable drive HSTL output buffers

■JTAG 1149.1 compatible test access port

■Delay Lock Loop (DLL) for accurate data placement

Functional Description

The CY7C1161V18, CY7C1176V18, CY7C1163V18, and CY7C1165V18 are 1.8V Synchronous Pipelined SRAMs equipped with QDR™-II+ architecture. QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to turn around the data bus that is required with common IO devices. Each port can be accessed through a common address bus. Addresses for read and write addresses are latched onto alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. In order to maximize data throughput, both read and write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1161V18), 9-bit words (CY7C1176V18), 18-bit words (CY7C1163V18), or 36-bit words (CY7C1165V18) that burst sequentially into or out of the device. Because data can be trans- ferred into and out of the device on every rising edge of both input clocks K and K, memory bandwidth is maximized while simpli- fying system design by eliminating bus turnarounds.

Depth expansion is accomplished with port selects for each port. Port selects allow each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the or K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Configurations

With cycle read latency of 2.5 cycles:

CY7C1161V18 – 2M x 8

CY7C1176V18 – 2M x 9

CY7C1163V18 – 1M x 18

CY7C1165V18 – 512K x 36

Selection Guide

Description	400 MHz	375 MHz	333 MHz	300 MHz	Unit
Maximum Operating Frequency	400	375	333	300	MHz
Maximum Operating Current	1080	1020	920	850	mA

Note

1.The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ = 1.4V to VDD.

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document Number: 001-06582 Rev. *D		Revised March 06, 2008

[+] Feedback