Cypress CY7C1245V18, CY7C1241V18 Application Example, Truth Table, Sram #4, BUS Master, Operation

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CY7C1241V18, CY7C1256V18

CY7C1243V18, CY7C1245V18

Application Example

Figure 1 shows the use of 4 QDR-II+ SRAMs in an application.

Figure 1. Application Example

 

 

 

SRAM #1

 

ZQ

RQ = 250ohms

 

 

ZQ

RQ = 250ohms

 

Vt

 

CQ/CQ

 

 

SRAM #4

CQ/CQ

 

 

 

D

RPS WPS BWS

 

Q

 

D

 

Q

 

 

R

A

K

K

 

A

RPS WPS BWS

K K

 

DATA IN

 

 

 

 

 

 

R

 

 

DATA OUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

Address

 

 

 

 

 

 

Vt

 

 

BUS MASTER

RPS

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

(CPU or ASIC)

WPS

 

 

 

 

 

 

 

 

 

 

BWS

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

R = 50ohms, Vt = VDDQ/2

 

 

 

 

 

 

 

 

Truth Table

The truth table for the CY7C1241V18, CY7C1256V18, CY7C1243V18, and CY7C1245V18 follows.[2, 3, 4, 5, 6, 7]

Operation

K

RPS

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

H[8]

L[9]

D(A) at K(t + 1)

D(A + 1) at

 

 

 

D(A + 2) at K(t + 2)

 

 

 

 

K(t +1)

D(A + 3) at K(t + 2)

Load address on the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edge of K; input

 

 

 

 

 

 

 

 

 

 

 

 

 

 

write data on two

 

 

 

 

 

 

 

 

 

 

 

 

 

 

consecutive K and

K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L[9]

X

Q(A) at K(t + 2)

Q(A + 1) at

 

 

 

 

Q(A + 2) at K(t + 3)

 

 

 

 

K(t + 2)

Q(A + 3) at K(t + 3)

(2.0 cycle Latency)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Load address on the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edge of K; wait

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two cycle; read data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

 

 

 

 

 

 

 

 

Standby: Clock

Stopped

X

X

Previous State

Previous State

Previous State

Previous State

Stopped

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected and the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.

5.“t” represents the cycle at which a Read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.

7.It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device ignores the second Read or Write request.

Document Number: 001-06365 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1256V18 Logic Block Diagram CY7C1241V18Doff Logic Block Diagram CY7C1243V18 Logic Block Diagram CY7C1245V18CY7C1256V18 4M x Pin ConfigurationsCY7C1241V18 4M x NC/144MCY7C1245V18 1M x CY7C1243V18 2M xWPS BWS RPS Pin Name Pin Description Pin DefinitionsNegative Input Clock Input TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TCK Pin for JtagByte Write Operations Functional OverviewWrite Operations Read OperationsDepth Expansion Valid Data Indicator QvldDelay Lock Loop DLL Programmable ImpedanceSram #4 Application ExampleTruth Table BUS MasterRemains unaltered Write Cycle DescriptionsComments During the data portion of a write sequenceWritten into the device. D 359 remains unaltered Write cycle description table for CY7C1245V18 follows.2Into the device Into the device. D 80 and D 3518 remain unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram EXIT2-IR UPDATE-DR UPDATE-IRTAP Controller TAP Controller Block DiagramTAP Electrical Characteristics Parameter Description Test Conditions Min Max UnitTAP AC Switching Characteristics TAP Timing and Test Conditions16Instruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Waveforms Power Up Sequence in QDR-II+ SramPower Up Sequence DLL ConstraintsAC Electrical Characteristics Electrical CharacteristicsDC Electrical Characteristics Maximum RatingsAC Test Loads and Waveforms CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max Switching CharacteristicsCypress Consortium Description 375 MHz 333 MHz 300 MHz Unit Set-up TimesSwitching Waveforms NOP Read WriteOrdering Information Ball Fine Pitch Ball Grid Array 15 x 17 x 1.4 mm Lead-Free Package Diagram Ball Fbga 15 x 17 x 1.40 mmVKN/KKVTMP Document HistoryNXR VKN/AESA