Cypress CY7C1471BV25, CY7C1473BV25, CY7C1475BV25 manual Truth Table for Read/Write, Function

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CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Table 5. Truth Table for Read/Write

 

 

 

 

 

 

 

 

 

 

 

 

 

 

The read-write truth table for CY7C1471BV25 follows.[1, 2, 8]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Function

 

WE

 

 

BW

A

 

BW

B

 

BW

C

 

BW

D

Read

 

H

 

 

X

 

X

 

X

 

X

 

 

 

 

 

 

 

 

 

 

 

 

Write No bytes written

 

L

 

 

H

 

H

 

H

 

H

 

 

 

 

 

 

 

 

 

 

 

 

Write Byte A – (DQA and DQPA)

 

L

 

 

L

 

H

 

H

 

H

Write Byte B – (DQB and DQPB)

 

L

 

 

H

 

L

 

H

 

H

Write Byte C – (DQC and DQPC)

 

L

 

 

H

 

H

 

L

 

H

Write Byte D – (DQD and DQPD)

 

L

 

 

H

 

H

 

H

 

L

Write All Bytes

 

L

 

 

L

 

L

 

L

 

L

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table

6. Truth Table for Read/Write

 

 

 

 

 

 

 

 

The read-write truth table for CY7C1473BV25 follows.[1, 2, 8]

 

 

 

 

 

 

 

 

 

Function

 

WE

 

 

BW

b

 

BW

a

Read

 

 

H

 

X

 

X

 

 

 

 

 

 

 

Write – No Bytes Written

 

L

 

H

 

H

 

 

 

 

 

 

 

Write Byte a – (DQa and DQPa)

 

L

 

H

 

L

Write Byte b – (DQb and DQPb)

 

L

 

L

 

H

Write Both Bytes

 

L

 

L

 

L

 

 

 

 

 

 

 

 

 

 

 

Table 7. Truth Table for Read/Write

The read-write truth table for CY7C1475BV25 follows.[1, 2, 8]

Function

 

WE

 

 

BW

x

Read

 

H

 

 

 

X

 

 

 

 

 

 

 

Write – No Bytes Written

 

L

 

 

 

H

 

 

 

 

 

 

 

Write Byte X − (DQx and DQPx)

 

L

 

 

 

L

Write All Bytes

 

L

 

All

 

 

= L

BW

Note

8. This table is only a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write is based on which byte write is active.

Document #: 001-15013 Rev. *E

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Contents Features Selection Guide Functional DescriptionDescription 133 MHz 100 MHz Unit Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1473BV25 4M xLogic Block Diagram CY7C1475BV25 1M x Pin Configurations CY7C1471BV25CY7C1473BV25 Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x CY7C1473BV25 4M xBall Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × NC/1GMode Input. Selects the Burst Order of the Device Power Supply Inputs to the Core of the DevicePower Supply for the IO Circuitry Pin Definitions Name DescriptionFunctional Overview Pin DefinitionsName Description TDIZZ Mode Electrical Characteristics First Second Third Fourth Address A1 A0Parameter Description Test Conditions Min Max Unit Truth Table Operation AddressUsed Truth Table for Read/Write FunctionTAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagTAP Registers TAP Timing TAP AC Switching Characteristics TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Scan Register Sizes Register Name Bit Size Identification Codes Instruction DescriptionBoundary Scan Exit Order 2M x Bit # Ball ID Boundary Scan Exit Order 4M x Bit # Ball IDBit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Electrical Characteristics Maximum RatingsOperating Range Range AmbientCapacitance Thermal ResistanceParameter Description Test Conditions Tqfp Fbga Unit Switching Characteristics Setup TimesParameter Description 133 MHz 100 MHz Unit Min Max Output TimesRite ReadSwitching Waveforms AddressStall ZZ Mode Timing Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document History

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.
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