Cypress CY7C1475BV25 manual Pin Definitions Name Description, Power Supply for the IO Circuitry

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CY7C1471BV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1473BV25, CY7C1475BV25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table 1. Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

IO

Description

 

A0, A1, A

Input-

Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

 

 

 

Synchronous

of the CLK. A[1:0] are fed to the two-bit burst counter.

 

 

 

 

A,

 

 

B,

Input-

Byte Write Inputs, Active LOW. Qualified with

 

to conduct writes to the SRAM. Sampled

 

BW

BW

WE

 

BWC, BWD,

Synchronous

on the rising edge of CLK.

 

BWE, BWF,

 

 

 

 

 

 

 

 

 

 

 

 

BWG, BWH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Write Enable Input, Active LOW. Sampled on the rising edge of CLK if

 

is active LOW.

 

WE

CEN

 

 

 

 

 

 

 

 

 

 

 

Synchronous

This signal must be asserted LOW to initiate a write sequence.

 

 

 

 

 

 

 

 

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address.

 

ADV/LD

 

 

 

 

 

 

 

 

 

 

 

Synchronous

When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

new address can be loaded into the device for an access. After being deselected, ADV/LD must

 

 

 

 

 

 

 

 

 

 

 

 

 

 

be driven LOW to load a new address.

 

CLK

Input-

Clock Input. Captures all synchronous inputs to the device. CLK is qualified with

 

CLK is

 

CEN.

 

 

 

 

 

 

 

 

 

 

 

Clock

only recognized if CEN is active LOW.

 

 

1

 

Input-

Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE2 and CE3 to select or deselect the device.

 

CE2

Input-

Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE3 to select or deselect the device.

 

 

3

 

Input-

Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE2 to select or deselect the device.

 

 

 

 

 

Input-

Output Enable, Asynchronous Input, Active LOW. Combined with the synchronous logic

 

OE

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

block inside the device to control the direction of the IO pins. When LOW, the IO pins are enabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE is masked during the data portion of a write sequence, during the first clock when emerging

 

 

 

 

 

 

 

 

 

 

 

 

 

 

from a deselected state, when the device has been deselected.

 

 

 

 

 

 

 

Input-

Clock Enable Input, Active LOW. When asserted LOW the clock signal is recognized by the

 

CEN

 

 

 

 

 

 

 

 

 

 

 

Synchronous

SRAM. When deasserted HIGH the clock signal is masked. Because deasserting CEN does

 

 

 

 

 

 

 

 

 

 

 

 

 

 

not deselect the device, CEN can be used to extend the previous cycle when required.

 

ZZ

Input-

ZZ “Sleep” Input. This active HIGH input places the device in a non-time-critical “sleep”

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

condition with data integrity preserved. For normal operation, this pin must be LOW or left

 

 

 

 

 

 

 

 

 

 

 

 

 

 

floating. ZZ pin has an internal pull down.

 

DQs

IO-

Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is triggered

 

 

 

 

 

 

 

 

 

 

 

Synchronous

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

 

 

 

 

 

 

 

 

 

 

 

 

 

 

specified by the addresses presented during the previous clock rise of the read cycle. The

 

 

 

 

 

 

 

 

 

 

 

 

 

 

direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

When HIGH, DQs and DQPX are placed in a tri-state condition.The outputs are automatically

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tri-stated during the data portion of a write sequence, during the first clock when emerging from

 

 

 

 

 

 

 

 

 

 

 

 

 

 

a deselected state, and when the device is deselected, regardless of the state of OE.

 

DQPX

IO-

Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQs. During

 

 

 

 

 

 

 

 

 

 

 

Synchronous

write sequences, DQPX is controlled by BWX correspondingly.

 

MODE

Input Strap Pin

Mode Input. Selects the Burst Order of the Device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects inter-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

leaved burst sequence.

 

VDD

Power Supply

Power Supply Inputs to the Core of the Device.

 

VDDQ

IO Power Supply

Power Supply for the IO Circuitry.

 

VSS

Ground

Ground for the Device.

 

TDO

JTAG serial output

Serial Data Out to the JTAG Circuit. Delivers data on the negative edge of TCK. If the JTAG

 

 

 

 

 

 

 

 

 

 

 

Synchronous

feature is not used, this pin must be left unconnected. This pin is not available on TQFP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

packages.

Document #: 001-15013 Rev. *E

 

 

 

 

 

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Contents Features Selection Guide Functional DescriptionDescription 133 MHz 100 MHz Unit Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1473BV25 4M xLogic Block Diagram CY7C1475BV25 1M x Pin Configurations CY7C1471BV25CY7C1473BV25 Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x CY7C1473BV25 4M xBall Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × NC/1GMode Input. Selects the Burst Order of the Device Power Supply Inputs to the Core of the DevicePower Supply for the IO Circuitry Pin Definitions Name DescriptionFunctional Overview Pin DefinitionsName Description TDIParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsFirst Second Third Fourth Address A1 A0 Used Truth TableOperation Address Truth Table for Read/Write FunctionTAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagTAP Registers TAP Timing 5V TAP AC Test Conditions TAP AC Switching CharacteristicsTAP DC Electrical Characteristics And Operating Conditions Scan Register Sizes Register Name Bit Size Identification Codes Instruction DescriptionBit # Ball ID Boundary Scan Exit Order 2M x Bit # Ball IDBoundary Scan Exit Order 4M x Bit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Electrical Characteristics Maximum RatingsOperating Range Range AmbientParameter Description Test Conditions Tqfp Fbga Unit CapacitanceThermal Resistance Switching Characteristics Setup TimesParameter Description 133 MHz 100 MHz Unit Min Max Output TimesRite ReadStall Switching WaveformsAddress ZZ Mode Timing Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document History

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.
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