Cypress CY7C1471BV25, CY7C1473BV25, CY7C1475BV25 manual Capacitance, Thermal Resistance

Page 21

CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

100 TQFP

165 FBGA

209 FBGA

Unit

Max

Max

Max

 

 

 

 

CADDRESS

Address Input Capacitance

TA = 25°C, f = 1 MHz,

6

6

6

pF

 

 

VDD = 2.5V

 

 

 

 

CDATA

Data Input Capacitance

5

5

5

pF

VDDQ = 2.5V

CCTRL

Control Input Capacitance

8

8

8

pF

 

CCLK

Clock Input Capacitance

 

6

6

6

pF

CIO

Input-Output Capacitance

 

5

5

5

pF

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

 

Test Conditions

100 TQFP

165 FBGA

209 FBGA

Unit

 

Package

Package

Package

 

 

 

 

 

 

 

 

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow

24.63

16.3

15.2

°C/W

 

(Junction to Ambient)

 

standard test methods and

 

 

 

 

 

 

 

procedures for measuring

 

 

 

 

ΘJC

Thermal Resistance

 

2.28

2.1

1.7

°C/W

 

thermal impedance,

 

(Junction to Case)

 

according to EIA/JESD51.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 7. AC Test Loads and Waveforms

 

 

 

2.5V IO Test Load

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

2.5V

 

 

 

R = 1667Ω

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

Z0

= 50Ω

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 1538Ω

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

≤ 1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VL = 1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

JIG AND

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90%

10%

≤ 1 ns

Document #: 001-15013 Rev. *E

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Contents Selection Guide Functional Description FeaturesDescription 133 MHz 100 MHz Unit Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1473BV25 4M x Logic Block Diagram CY7C1471BV25 2M xLogic Block Diagram CY7C1475BV25 1M x CY7C1471BV25 Pin ConfigurationsCY7C1473BV25 CY7C1473BV25 4M x Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M xNC/1G Ball Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M ×Power Supply Inputs to the Core of the Device Mode Input. Selects the Burst Order of the DevicePower Supply for the IO Circuitry Pin Definitions Name DescriptionPin Definitions Functional OverviewName Description TDIZZ Mode Electrical Characteristics First Second Third Fourth Address A1 A0Parameter Description Test Conditions Min Max Unit Truth Table Operation AddressUsed Function Truth Table for Read/WriteIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Registers TAP Timing TAP AC Switching Characteristics TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Codes Instruction Description Scan Register Sizes Register Name Bit SizeBoundary Scan Exit Order 2M x Bit # Ball ID Boundary Scan Exit Order 4M x Bit # Ball IDBit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Maximum Ratings Electrical CharacteristicsOperating Range Range AmbientCapacitance Thermal ResistanceParameter Description Test Conditions Tqfp Fbga Unit Setup Times Switching CharacteristicsParameter Description 133 MHz 100 MHz Unit Min Max Output TimesRead RiteSwitching Waveforms AddressStall ZZ Mode Timing Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History Issue Orig. Description of Change Date

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.
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