Cypress CY7C1473BV25, CY7C1471BV25 manual Switching Characteristics, Output Times, Setup Times

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CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Switching Characteristics

Over the Operating Range. Timing reference level is 1.25V when VDDQ = 2.5V. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 21 unless otherwise noted.

Parameter

Description

133 MHz

100 MHz

Unit

Min

Max

Min

Max

 

 

 

tPOWER

 

1

 

1

 

ms

Clock

 

 

 

 

 

 

tCYC

Clock Cycle Time

7.5

 

10

tCH

Clock HIGH

2.5

 

3.0

tCL

Clock LOW

2.5

 

3.0

Output Times

 

 

 

 

ns

ns

ns

tCDV

tDOH

tCLZ

tCHZ

tOEV

tOELZ

tOEHZ

Data Output Valid After CLK Rise

 

6.5

 

8.5

ns

Data Output Hold After CLK Rise

2.5

 

2.5

 

ns

Clock to Low-Z [16, 17, 18]

3.0

 

3.0

 

ns

Clock to High-Z [16, 17, 18]

 

3.8

 

4.5

ns

 

LOW to Output Valid

 

3.0

 

3.8

ns

OE

 

LOW to Output Low-Z [16, 17, 18]

0

 

0

 

ns

OE

 

HIGH to Output High-Z [16, 17, 18]

 

3.0

 

4.0

ns

OE

Setup Times

tAS

 

Address Setup Before CLK Rise

1.5

 

1.5

tALS

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

 

Setup Before CLK Rise

1.5

 

1.5

tWES

 

 

 

 

 

X Setup Before CLK Rise

1.5

 

1.5

WE,

BW

tCENS

 

 

Setup Before CLK Rise

1.5

 

1.5

CEN

tDS

 

Data Input Setup Before CLK Rise

1.5

 

1.5

tCES

 

Chip Enable Setup Before CLK Rise

1.5

 

1.5

Hold Times

 

 

 

 

 

 

 

 

 

 

ns

ns

ns

ns

ns

ns

tAH

tALH

tWEH

tCENH

tDH

tCEH

Address Hold After CLK Rise

0.5

 

0.5

 

 

 

 

 

 

Hold After CLK Rise

0.5

 

0.5

ADV/LD

 

 

 

 

 

 

X Hold After CLK Rise

0.5

 

0.5

WE,

BW

 

Hold After CLK Rise

0.5

 

0.5

CEN

Data Input Hold After CLK Rise

0.5

 

0.5

Chip Enable Hold After CLK Rise

0.5

 

0.5

 

 

 

 

 

 

 

 

 

 

ns

ns

ns

ns

ns

ns

Notes

15.This part has a voltage regulator internally; tPOWER is the time that the power is supplied above VDD(minimum) initially, before a read or write operation can be initiated.

16.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 21. Transition is measured ±200 mV from steady-state voltage.

17.At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions.

18.This parameter is sampled and not 100% tested.

Document #: 001-15013 Rev. *E

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Contents Description 133 MHz 100 MHz Unit FeaturesSelection Guide Functional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1473BV25 4M xLogic Block Diagram CY7C1475BV25 1M x Pin Configurations CY7C1471BV25CY7C1473BV25 Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x CY7C1473BV25 4M xBall Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × NC/1GPower Supply for the IO Circuitry Mode Input. Selects the Burst Order of the DevicePower Supply Inputs to the Core of the Device Pin Definitions Name DescriptionName Description Functional OverviewPin Definitions TDIFirst Second Third Fourth Address A1 A0 ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit Operation Address Truth TableUsed Truth Table for Read/Write FunctionTAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagTAP Registers TAP Timing TAP DC Electrical Characteristics And Operating Conditions TAP AC Switching Characteristics5V TAP AC Test Conditions Scan Register Sizes Register Name Bit Size Identification Codes Instruction DescriptionBoundary Scan Exit Order 4M x Bit # Ball ID Boundary Scan Exit Order 2M x Bit # Ball IDBit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Operating Range Electrical CharacteristicsMaximum Ratings Range AmbientThermal Resistance CapacitanceParameter Description Test Conditions Tqfp Fbga Unit Parameter Description 133 MHz 100 MHz Unit Min Max Switching CharacteristicsSetup Times Output TimesRite ReadAddress Switching WaveformsStall ZZ Mode Timing Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document History

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.
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