Boundary Scan Exit Order 2M x Bit # Ball ID

CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Table 11. Boundary Scan Exit Order (2M x 36)

Bit #	165-Ball ID	Bit #	165-Ball ID	Bit #	165-Ball ID
1	C1	21	R3	41	J11

2	D1	22	P2	42	K10

3	E1	23	R4	43	J10

4	D2	24	P6	44	H11

5	E2	25	R6	45	G11

6	F1	26	R8	46	F11

7	G1	27	P3	47	E11

8	F2	28	P4	48	D10

9	G2	29	P8	49	D11

10	J1	30	P9	50	C11

11	K1	31	P10	51	G10

12	L1	32	R9	52	F10

13	J2	33	R10	53	E10

14	M1	34	R11	54	A9

15	N1	35	N11	55	B9

16	K2	36	M11	56	A10

17	L2	37	L11	57	B10

18	M2	38	M10	58	A8

19	R1	39	L10	59	B8

20	R2	40	K11	60	A7

Table 12. Boundary Scan Exit Order (4M x 18)

Bit #

165-Ball ID

61B7

62B6

63A6

64B5

65A5

66A4

67B4

68B3

69A3

70A2

71B2

Bit #	165-Ball ID	Bit #	165-Ball ID	Bit #	165-Ball ID	Bit #	165-Ball ID
1	D2	14	R4	27	L10	40	B10

2	E2	15	P6	28	K10	41	A8

3	F2	16	R6	29	J10	42	B8

4	G2	17	R8	30	H11	43	A7

5	J1	18	P3	31	G11	44	B7

6	K1	19	P4	32	F11	45	B6

7	L1	20	P8	33	E11	46	A6

8	M1	21	P9	34	D11	47	B5

9	N1	22	P10	35	C11	48	A4

10	R1	23	R9	36	A11	49	B3

11	R2	24	R10	37	A9	50	A3

12	R3	25	R11	38	B9	51	A2

13	P2	26	M10	39	A10	52	B2

Document #: 001-15013 Rev. *E

Page 18 of 30

[+] Feedback

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.