Cypress CY7C1475BV25 Logic Block Diagram CY7C1471BV25 2M x, Logic Block Diagram CY7C1473BV25 4M x

Page 2

CY7C1471BV25 CY7C1473BV25, CY7C1475BV25

Logic Block Diagram – CY7C1471BV25 (2M x 36)

	A0, A1, A	ADDRESS	A1			A1'
	A0, A1, A	REGISTER
		REGISTER		D1	Q1
	MODE		A0	D0	Q0	A0'
		CE	ADV/LD		BURST
CLK	C	CE			LOGIC
CLK	C				LOGIC
CEN			C
			WRITE ADDRESS
			REGISTER

D

S

A

E

T

ADV/LD

N

A

MEMORY

S

BW A

WRITE

WRITE REGISTRY

ARRAY

E

S

B

AND DATA COHERENCY

DRIVERS

T

BW

A

CONTROL LOGIC

E

BW C

M

E

P

R

BW D

S

I

WE

N

G

INPUT

E

REGISTER

OE

READ LOGIC

CE1

CE2

CE3

ZZ

SLEEP

CONTROL

Logic Block Diagram – CY7C1473BV25 (4M x 18)

A0, A1, A	ADDRESS	A1			A1'
	REGISTER	A1	D1	Q1	A1'
MODE		A0	D0	Q0	A0'
				BURST

CLK	C	CE	ADV/LD	LOGIC
CEN			C
			WRITE ADDRESS
			REGISTER
						S	D
						S	A
						E	T
	ADV/LD					N	A
	BW A			WRITE	MEMORY	S
	BW A		WRITE REGISTRY		ARRAY	E	S
			WRITE REGISTRY		ARRAY	E	S
	BW B		AND DATA COHERENCY	DRIVERS		A	T
			CONTROL LOGIC			A	E
						M	E
						P	R
	WE					S	I
	WE						N
							G
					INPUT	E
					REGISTER	E
	OE				REGISTER
	OE		READ LOGIC
	CE1		READ LOGIC
	CE1
	CE2
	CE3
	ZZ		SLEEP
	ZZ		CONTROL
			CONTROL

O

U

T

P

U

T

B

U

F

F

E

R

S

E

O

U

T

P

U

T

B

U

F

F

E

R

S

E

DQs

DQP A DQP B DQP C DQP D

DQs

DQPA DQPB

Document #: 001-15013 Rev. *E

Page 2 of 30

[+] Feedback

Image 2

Contents Description 133 MHz 100 MHz Unit FeaturesSelection Guide Functional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1473BV25 4M xLogic Block Diagram CY7C1475BV25 1M x Pin Configurations CY7C1471BV25CY7C1473BV25 Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x CY7C1473BV25 4M xBall Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × NC/1GPower Supply for the IO Circuitry Mode Input. Selects the Burst Order of the DevicePower Supply Inputs to the Core of the Device Pin Definitions Name DescriptionName Description Functional OverviewPin Definitions TDIParameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsFirst Second Third Fourth Address A1 A0 Used Truth TableOperation Address Truth Table for Read/Write FunctionTAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagTAP Registers TAP Timing 5V TAP AC Test Conditions TAP AC Switching CharacteristicsTAP DC Electrical Characteristics And Operating Conditions Scan Register Sizes Register Name Bit Size Identification Codes Instruction DescriptionBit # Ball ID Boundary Scan Exit Order 2M x Bit # Ball IDBoundary Scan Exit Order 4M x Bit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Operating Range Electrical CharacteristicsMaximum Ratings Range AmbientParameter Description Test Conditions Tqfp Fbga Unit CapacitanceThermal Resistance Parameter Description 133 MHz 100 MHz Unit Min Max Switching CharacteristicsSetup Times Output TimesRite ReadStall Switching WaveformsAddress ZZ Mode Timing Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document History

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.