Cypress CY7C1471BV25, CY7C1473BV25 manual Document History, Issue Orig. Description of Change Date

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CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Document History Page

Document Title: CY7C1471BV25/CY7C1473BV25/CY7C1475BV25, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture

Document Number: 001-15013

REV.

ECN NO.

Issue

Orig. of

Description of Change

Date

Change

 

 

 

 

 

 

 

 

**

1024500

See ECN

VKN/KKVTMP

New Data Sheet

 

 

 

 

 

*A

1274731

See ECN

VKN/AESA

Corrected typo in the “NOP, STALL and DESELECT Cycles” waveform

 

 

 

 

 

*B

1562503

See ECN

VKN/AESA

Removed 1.8V IO offering from the data sheet

 

 

 

 

 

*C

1897447

See ECN

VKN/AESA

Added footnote 14 related to IDD

 

 

 

 

 

*D

2082487

See ECN

VKN

Converted from preliminary to final

 

 

 

 

 

*E

2159486

See ECN

VKN/PYRS

Minor Change-Moved to the external web

 

 

 

 

 

© Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress.

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Document #: 001-15013 Rev. *E

Revised February 29, 2008

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NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All products and company names mentioned in this document may be the trademarks of their respective holders.

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Contents Description 133 MHz 100 MHz Unit FeaturesSelection Guide Functional Description Cypress Semiconductor Corporation 198 Champion CourtLogic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1473BV25 4M xLogic Block Diagram CY7C1475BV25 1M x Pin Configurations CY7C1471BV25CY7C1473BV25 Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x CY7C1473BV25 4M xBall Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × NC/1GPower Supply for the IO Circuitry Mode Input. Selects the Burst Order of the DevicePower Supply Inputs to the Core of the Device Pin Definitions Name DescriptionName Description Functional OverviewPin Definitions TDIZZ Mode Electrical Characteristics First Second Third Fourth Address A1 A0Parameter Description Test Conditions Min Max Unit Truth Table Operation AddressUsed Truth Table for Read/Write FunctionTAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagTAP Registers TAP Timing TAP AC Switching Characteristics TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Scan Register Sizes Register Name Bit Size Identification Codes Instruction DescriptionBoundary Scan Exit Order 2M x Bit # Ball ID Boundary Scan Exit Order 4M x Bit # Ball IDBit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Operating Range Electrical CharacteristicsMaximum Ratings Range AmbientCapacitance Thermal ResistanceParameter Description Test Conditions Tqfp Fbga Unit Parameter Description 133 MHz 100 MHz Unit Min Max Switching CharacteristicsSetup Times Output TimesRite ReadSwitching Waveforms AddressStall ZZ Mode Timing Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document History

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.
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