Cypress CY7C1576V18, CY7C1565V18 Functional Overview, Read Operations, Byte Write Operations

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CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Functional Overview

The CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II+ completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1561V18, four 9-bit data transfers in the case of CY7C1576V18, four 18-bit data transfers in the case of CY7C1563V18, and four 36-bit data transfers in the case of CY7C1565V18, in two clock cycles.

Accesses for both ports are initiated on the positive input clock

(K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K).

All synchronous data inputs (D[x:0]) inputs pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) outputs pass through output registers controlled by the rising edge of the input clocks (K and K) as well.

All synchronous control (RPS, WPS, NWS[x:0], BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K).

CY7C1563V18 is described in the following sections. The same basic descriptions apply to CY7C1561V18, CY7C1576V18, and CY7C1565V18.

Read Operations

The CY7C1563V18 is organized internally as four arrays of 1M x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to address inputs are stored in the read address register. Following the next two K clock rise, the corre- sponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subse- quent rising edge of K, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the input clock (K or K). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the input clocks (K and K).

When the read port is deselected, the CY7C1563V18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the negative input clock (K). This enables for a

seamless transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock

(K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1563V18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a Byte write operation.

Concurrent Transactions

The read and write ports on the CY7C1563V18 operates completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise.

Read access and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports are deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations cannot be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (since write operations cannot be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alter- nating read or write operations being initiated, with the first access being a read.

Document Number: 001-05384 Rev. *F

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Contents Features Configurations Selection GuideFunctional Description Description 400 MHz 375 MHz 333 MHz 300 MHz UnitDoff Logic Block Diagram CY7C1561V18Logic Block Diagram CY7C1576V18 Logic Block Diagram CY7C1563V18 Logic Block Diagram CY7C1565V18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1561V18 8M x CY7C1576V18 8M xCY7C1565V18 2M x CY7C1563V18 4M xWPS BWS Negative Input Clock Input Pin DefinitionsPin Name Pin Description Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceTDO for Jtag TCK Pin for JtagFunctional Overview Read OperationsWrite Operations Byte Write OperationsValid Data Indicator Qvld Application ExampleDepth Expansion Programmable ImpedanceTruth Table Write Cycle DescriptionsOperation CommentsWrite cycle description table for CY7C1576V18 follows Write cycle description table for CY7C1565V18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in QDR-II+ SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Automatic Power down Max VDD 400 MHz VDD Operating Supply VDD = Max 333 MHz300 MHz Current Both Ports DeselectedAC Electrical Characteristics CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitSwitching Characteristics Consortium Description 400 MHz 375 MHz 333 MHz 300 MHz UnitParameter Min Max HighSwitching Waveforms Read/Write/Deselect Sequence 31, 32Ordering Information 333 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History
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