Cypress CY7C1413BV18 manual Features, Configurations, Functional Description, Selection Guide

CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18

36-Mbit QDR™-II SRAM 4-Word Burst Architecture

Features

■Separate independent read and write data ports

❐Supports concurrent transactions

■300 MHz clock for high bandwidth

■4-word burst for reducing address bus frequency

■Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz

■Two input clocks (K and K) for precise DDR timing

❐SRAM uses rising edges only

■Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■Single multiplexed address input bus latches address inputs for both read and write ports

■Separate port selects for depth expansion

■Synchronous internally self-timed writes

■QDR-II operates with 1.5 cycle read latency when DLL is enabled

■Operates as a QDR-I device with 1 cycle read latency in DLL off mode

■Available in x 8, x 9, x 18, and x 36 configurations

■Full data coherency, providing most current data

■Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD

■Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■Offered in both Pb-free and non Pb-free packages

■Variable drive HSTL output buffers

■JTAG 1149.1 compatible test access port

■Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1411BV18 – 4M x 8

CY7C1426BV18 – 4M x 9

CY7C1413BV18 – 2M x 18

CY7C1415BV18 – 1M x 36

Functional Description

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support the read opera- tions and the write port has dedicated data inputs to support the write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1411BV18), 9-bit words (CY7C1426BV18), 18-bit words (CY7C1413BV18), or 36-bit words (CY7C1415BV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds.”

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on chip synchronous self-timed write circuitry.

Selection Guide

Description		300 MHz	278 MHz	250 MHz	200 MHz	167 MHz	Unit
Maximum Operating Frequency		300	278	250	200	167	MHz
Maximum Operating Current	x8	885	815	745	620	535	mA
	x9	900	830	760	620	535
	x18	940	865	790	655	565
	x36	1040	950	870	715	615

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document Number: 001-07037 Rev. *D			Revised June 16, 2008

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