Cypress CY14B108L, CY14B108N manual Features, Functional Description, Logic Block Diagram1, 2

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PRELIMINARY

CY14B108L, CY14B108N

 

8 Mbit (1024K x 8/512K x 16) nvSRAM

Features

20 ns, 25 ns, and 45 ns Access Times

Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N)

Hands off Automatic STORE on power down with only a small Capacitor

STORE to QuantumTrap® nonvolatile elements initiated by Software, device pin, or AutoStore® on power down

RECALL to SRAM initiated by Software or power up

Infinite Read, Write, and RECALL Cycles

200,000 STORE cycles to QuantumTrap

20 year data retention

Single 3V +20%, -10% operation

Commercial and Industrial Temperatures

48-ball FBGA and 44-pin and 54-pin TSOP-II packages

Pb-free and RoHS compliant

Functional Description

The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Logic Block Diagram[1, 2, 3]

 

 

 

Quatrum Trap

VCC

VCAP

 

 

 

 

 

 

 

A0

 

 

2048 X 2048 X 2

 

 

 

R

 

 

 

 

POWER

 

A1

O

 

 

 

STORE

CONTROL

 

A2

W

 

 

 

RECALL

 

 

 

A3

 

 

 

 

 

 

 

D

 

 

 

 

STORE/RECALL

 

A4

 

 

 

 

HSB

A5

E

 

STATIC RAM

 

 

CONTROL

 

A6

C

 

ARRAY

 

 

 

 

 

A7

O

 

2048 X 2048 X 2

 

 

SOFTWARE

 

D

 

 

 

 

 

A8

 

 

 

 

DETECT

A14 - A2

E

 

 

 

 

A17

 

 

 

 

 

 

 

A18

R

 

 

 

 

 

 

 

A19

 

 

 

 

 

 

 

 

DQ0

 

 

 

 

 

 

 

 

DQ1

 

 

 

 

 

 

 

 

DQ2

 

 

 

 

 

 

 

 

DQ3

I

 

 

 

 

 

 

 

DQ4

 

 

 

 

 

 

 

N

 

 

 

 

 

 

 

DQ5

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

DQ6

U

 

 

 

 

 

 

 

DQ7

T

 

 

 

 

 

 

 

B

 

COLUMN I/O

 

 

 

 

 

DQ8

U

 

 

 

 

 

 

 

F

 

 

 

 

 

 

 

DQ9

F

 

 

 

 

 

 

 

DQ10

E

 

COLUMN DEC

 

 

 

 

 

R

 

 

 

 

 

 

DQ11

 

 

 

 

 

 

 

S

 

 

 

 

 

 

 

DQ12

 

 

 

 

 

 

 

 

DQ13

 

 

 

 

 

 

 

 

DQ14

A9

A10

A11 A12 A13 A14

A15

A16

 

 

 

DQ15

 

 

 

 

 

 

 

 

 

 

 

OE WE

CE

BLE

BHE

Note

 

 

 

 

 

 

1.

Address A0 - A19 for x8 configuration and Address A0

- A18 for x16 configuration.

 

 

 

 

2.

Data DQ0

- DQ7 for x8 configuration and Data DQ0

- DQ15 for x16 configuration.

 

 

 

 

3.

BHE and

BLE are applicable for x16 configuration only.

 

 

 

 

Cypress Semiconductor Corporation

198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document #: 001-45523 Rev. *B

 

 

 

Revised March 19, 2009

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Contents Logic Block Diagram1, 2 FeaturesFunctional Description Cypress Semiconductor CorporationTop View PinoutsNot to scale Byte High Enable, Active LOW . Controls DQ 15 DQ Output Enable, Active LOW . The active LO WByte Low Enable, Active LOW . Controls DQ 7 DQ Power Supply Inputs to the DeviceSram Read Device OperationSram Write AutoStore OperationSoftware Store Hardware Recall Power UpSoftware Recall Store Mode SelectionRecall Data Protection Preventing AutoStoreNoise Considerations Best PracticesMaximum Ratings DC Electrical CharacteristicsOperating Range RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsParameters Sram Read Cycle Sram Write CycleSram Read Cycle #2 CE and OE Controlled3, 11 Sram Write Cycle #2 Parameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up RecallSoftware Controlled STORE/RECALL Cycle Hardware Store Cycle To Output Active Time when write latch not setDescription 20 ns 25 ns 45 ns Unit Min Max Hardware Store Pulse WidthTruth Table For Sram Operations Inputs/Outputs Mode PowerHigh Z CY14B108N-ZSP20XCT Ordering InformationCY14B108N-ZSP20XIT CY14B108N-ZSP25XCTCY14B108N-ZSP45XIT CY14B108N-ZSP45XCTCY 14 B 108L-ZS P 20 X C T Part Numbering NomenclatureZS Tsop NvsramPin Tsop II Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Gvch Document HistoryGVCH/PYRS USB Sales, Solutions, and Legal Information