Cypress CY14B108L, CY14B108N manual Data Retention and Endurance, Capacitance, Thermal Resistance

Page 9

 

 

 

 

 

 

PRELIMINARY

 

 

CY14B108L, CY14B108N

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Retention and Endurance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Description

 

 

 

Min

 

 

Unit

 

DATAR

 

 

 

 

Data Retention

 

 

 

20

 

 

Years

 

NVC

 

 

 

 

Nonvolatile STORE Operations

 

 

 

200

 

 

K

 

 

 

Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

In the following table, the capacitance parameters are listed.[10]

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

 

Description

Test Conditions

 

Max

 

 

Unit

 

 

 

CIN

 

Input Capacitance

TA = 25°C, f = 1 MHz,

 

14

 

 

pF

 

 

 

 

 

 

 

VCC = 0 to 3.0V

 

 

 

 

 

 

 

 

 

COUT

 

Output Capacitance

 

14

 

 

pF

 

 

 

Thermal Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

In the following table, the thermal resistance parameters are listed. [10]

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

Test Conditions

 

 

48-FBGA

44-TSOP II

54-TSOP II

 

Unit

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard test methods

 

28.82

31.11

30.73

 

°C/W

 

 

 

(Junction to Ambient)

 

and procedures for measuring thermal

 

 

 

 

 

 

 

 

 

 

 

 

 

 

impedance, in accordance with EIA/JESD51.

 

 

 

 

 

 

 

 

ΘJC

Thermal Resistance

 

 

7.84

5.56

6.08

 

°C/W

 

 

 

(Junction to Case)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 4. AC Test Loads

 

 

 

 

 

 

 

 

 

 

 

3.0V

577 Ω

R1

 

OUTPUT

 

30 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

 

 

 

 

 

 

 

 

789

Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

577 Ω

for tri-state specs

3.0V

R1

OUTPUT

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

 

 

 

 

 

 

 

 

789

Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Conditions

Input Pulse Levels

0V to 3V

Input Rise and Fall Times (10% - 90%)

<3 ns

Input and Output Timing Reference Levels

1.5V

Note

10. These parameters are guaranteed but not tested.

Document #: 001-45523 Rev. *B

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Contents Logic Block Diagram1, 2 FeaturesFunctional Description Cypress Semiconductor CorporationPinouts Top ViewNot to scale Byte High Enable, Active LOW . Controls DQ 15 DQ Output Enable, Active LOW . The active LO WByte Low Enable, Active LOW . Controls DQ 7 DQ Power Supply Inputs to the DeviceSram Read Device OperationSram Write AutoStore OperationHardware Recall Power Up Software StoreSoftware Recall Mode Selection StoreRecall Data Protection Preventing AutoStoreNoise Considerations Best PracticesMaximum Ratings DC Electrical CharacteristicsOperating Range RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsParameters Sram Read Cycle Sram Write CycleSram Read Cycle #2 CE and OE Controlled3, 11 Sram Write Cycle #2 Parameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up RecallSoftware Controlled STORE/RECALL Cycle Hardware Store Cycle To Output Active Time when write latch not setDescription 20 ns 25 ns 45 ns Unit Min Max Hardware Store Pulse WidthInputs/Outputs Mode Power Truth Table For Sram OperationsHigh Z CY14B108N-ZSP20XCT Ordering InformationCY14B108N-ZSP20XIT CY14B108N-ZSP25XCTCY14B108N-ZSP45XIT CY14B108N-ZSP45XCTCY 14 B 108L-ZS P 20 X C T Part Numbering NomenclatureZS Tsop NvsramPin Tsop II Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Document History GvchGVCH/PYRS USB Sales, Solutions, and Legal Information