Cypress CY14B108N, CY14B108L manual Maximum Ratings, Operating Range, DC Electrical Characteristics

Page 8

PRELIMINARY

CY14B108L, CY14B108N

 

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Maximum Accumulated Storage Time

 

At 150°C Ambient Temperature

1000h

At 85°C Ambient Temperature

..20 Years

Ambient Temperature with

 

Power Applied

–55°C to +150°C

Supply Voltage on VCC Relative to GND

.......... –0.5V to 4.1V

Voltage Applied to Outputs

 

in High-Z State

–0.5V to VCC + 0.5V

Input Voltage

–0.5V to Vcc + 0.5V

Transient Voltage (<20 ns) on

 

Any Pin to Ground Potential

–2.0V to VCC + 2.0V

Package Power Dissipation

 

Capability (TA = 25°C)

1.0W

Surface Mount Pb Soldering

 

Temperature (3 Seconds)

+260°C

DC Output Current (1 output at a time, 1s duration) ....15 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch Up Current

...................................................

> 200 mA

Operating Range

 

 

 

 

 

Range

 

Ambient Temperature

VCC

Commercial

 

0°C to +70°C

2.7V to 3.6V

 

 

 

 

Industrial

 

–40°C to +85°C

2.7V to 3.6V

 

 

 

 

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)

Parameter

Description

 

 

 

 

 

 

 

 

 

Test Conditions

 

 

 

 

Min

Max

Unit

ICC1

Average VCC Current

 

tRC = 20 ns

 

 

 

 

 

 

 

 

 

 

Commercial

 

70

mA

 

 

 

tRC = 25 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

mA

 

 

 

tRC = 45 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

55

mA

 

 

 

Values obtained without output loads (IOUT = 0 mA)

Industrial

 

75

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

75

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

57

mA

ICC2

Average VCC Current

 

All Inputs Don’t Care, VCC = Max

 

 

 

 

 

20

mA

 

during STORE

 

Average current for duration tSTORE

 

 

 

 

 

 

 

ICC3[7]

Average VCC Current at

 

All I/P cycling at CMOS levels.

 

 

 

 

 

40

mA

 

tRC= 200 ns, 3V, 25°C

 

Values obtained without output loads (IOUT = 0 mA).

 

 

 

 

 

 

 

 

typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC4

Average VCAP Current

 

All Inputs Don’t Care, VCC = Max

 

 

 

 

 

10

mA

 

during AutoStore Cycle

Average current for duration tSTORE

 

 

 

 

 

 

 

ISB

VCC Standby Current

 

 

 

> (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V). Standby

 

10

mA

CE

 

 

 

 

current level after nonvolatile cycle is complete.

 

 

 

 

 

 

 

 

 

 

Inputs are static. f = 0 MHz.

 

 

 

 

 

 

 

I [8]

Input Leakage Current

 

V

CC

= Max, V

SS

< V

IN

< V

CC

 

 

 

 

–2

+2

μA

IX

(except HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Leakage Current

 

VCC = Max, VSS < VIN < VCC

 

 

 

 

–200

+2

μA

 

(for HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Off-State Output

 

VCC

=

Max, VSS < VOUT < VCC,

 

or

 

> VIH or

 

 

 

 

 

–2

+2

μA

 

CE

OE

BHE/BLE > VIH

 

Leakage Current

 

or WE < VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

VCC +

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vss – 0.5

0.8

V

VOH

Output HIGH Voltage

 

IOUT = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.4

 

V

VOL

Output LOW Voltage

 

IOUT = 4 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

V

VCAP[9]

Storage Capacitor

Between VCAP pin and VSS, 5V Rated

 

 

 

 

122

360

μF

Notes

7.Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.

8.The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested.

9.VCAP (Storage capacitor) nominal value is 150uF.

Document #: 001-45523 Rev. *B

Page 8 of 24

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Contents Features Logic Block Diagram1, 2Functional Description Cypress Semiconductor CorporationNot to scale PinoutsTop View Output Enable, Active LOW . The active LO W Byte High Enable, Active LOW . Controls DQ 15 DQByte Low Enable, Active LOW . Controls DQ 7 DQ Power Supply Inputs to the DeviceDevice Operation Sram ReadSram Write AutoStore OperationSoftware Recall Hardware Recall Power UpSoftware Store Recall Mode SelectionStore Preventing AutoStore Data ProtectionNoise Considerations Best PracticesDC Electrical Characteristics Maximum RatingsOperating Range RangeData Retention and Endurance CapacitanceThermal Resistance AC Test ConditionsAC Switching Characteristics Switching WaveformsParameters Sram Read Cycle Sram Write CycleSram Read Cycle #2 CE and OE Controlled3, 11 Sram Write Cycle #2 AutoStore/Power Up Recall Parameters Description 20 ns 25 ns 45 ns Unit Min MaxSoftware Controlled STORE/RECALL Cycle To Output Active Time when write latch not set Hardware Store CycleDescription 20 ns 25 ns 45 ns Unit Min Max Hardware Store Pulse WidthHigh Z Inputs/Outputs Mode PowerTruth Table For Sram Operations Ordering Information CY14B108N-ZSP20XCTCY14B108N-ZSP20XIT CY14B108N-ZSP25XCTCY14B108N-ZSP45XCT CY14B108N-ZSP45XITPart Numbering Nomenclature CY 14 B 108L-ZS P 20 X C TZS Tsop NvsramPackage Diagrams Pin Tsop IIBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 GVCH/PYRS Document HistoryGvch Sales, Solutions, and Legal Information USB