THEORY OF OPERATION | ||
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FIGURE E.6 - IGBT
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| GATE |
| SOURCE |
n + | n + |
p | BODY REGION |
n - | DRAIN DRIFT REGION |
n + | BUFFER LAYER |
p + | INJECTING LAYER |
| POSITIVE |
| VOLTAGE |
| APPLIED |
| GATE |
| SOURCE |
n + | n + |
p | BODY REGION |
n - | DRAIN DRIFT REGION |
n + | BUFFER LAYER |
p + | INJECTING LAYER |
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DRAIN | DRAIN |
A. PASSIVE | B. ACTIVE |
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INSULATED GATE BIPOLAR TRANSISTOR (IGBT) OPERATION
An IGBT is a type of transistor. IGBT are semiconduc- tors well suited for high frequency switching and high current applications.
Example A in Figure E.6 shows an IGBT in passive mode. There is no gate signal, zero volts relative to the source, and therefore, no current flow. The drain termi- nal of the IGBT may be connected to a voltage supply; but since there is no conduction, the circuit will not sup- ply current to components connected to the source. The circuit is turned OFF like a light switch.
Example B shows the IGBT in an active mode. When the gate signal , a positive DC voltage relative to the source, is applied to the gate terminal of the IGBT, it is capable of conducting current. A voltage supply con- nected to the drain terminal will allow the IGBT to con- duct and supply current to the circuit components cou- pled to the source. Current will flow through the con- ducting IGBT to downstream components as long as the positive gate signal is present. This is similar to turning ON a light switch.
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NOTE: Unshaded areas of Block Logic Diagram are the subject of discussion