PRELIMINARY

 

CY14B104K, CY14B104M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Switching Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

Description

20 ns

25 ns

45 ns

Unit

Cypress

Alt

Min

Max

Min

Max

Min

Max

Parameters

Parameters

 

 

 

 

 

 

 

 

 

 

SRAM Read Cycle

 

 

 

 

 

 

 

 

tACE

tACS

Chip Enable Access Time

 

20

 

25

 

45

ns

tRC [16]

tRC

Read Cycle Time

20

 

25

 

45

 

ns

tAA [17]

tAA

Address Access Time

 

20

 

25

 

45

ns

tDOE

tOE

Output Enable to Data Valid

 

10

 

12

 

20

ns

tOHA[17]

tOH

Output Hold After Address Change

3

 

3

 

3

 

ns

tLZCE [14, 18]

tLZ

Chip Enable to Output Active

3

 

3

 

3

 

ns

tHZCE [14, 18]

tHZ

Chip Disable to Output Inactive

 

8

 

10

 

15

ns

tLZOE [14, 18]

tOLZ

Output Enable to Output Active

0

 

0

 

0

 

ns

tHZOE [14, 18]

tOHZ

Output Disable to Output Inactive

 

8

 

10

 

15

ns

tPU [14]

tPA

Chip Enable to Power Active

0

 

0

 

0

 

ns

tPD [14]

tPS

Chip Disable to Power Standby

 

20

 

25

 

45

ns

tDBE

-

 

 

Byte Enable to Data Valid

 

10

 

12

 

20

ns

tLZBE[14]

-

 

 

Byte Enable to Output Active

0

 

0

 

0

 

ns

tHZBE[14]

-

 

 

Byte Disable to Output Inactive

 

8

 

10

 

15

ns

SRAM Write Cycle

 

 

 

 

 

 

 

 

tWC

tWC

Write Cycle Time

20

 

25

 

45

 

ns

tPWE

tWP

Write Pulse Width

15

 

20

 

30

 

ns

tSCE

tCW

Chip Enable To End of Write

15

 

20

 

30

 

ns

tSD

tDW

Data Setup to End of Write

8

 

10

 

15

 

ns

tHD

tDH

Data Hold After End of Write

0

 

0

 

0

 

ns

tAW

tAW

Address Setup to End of Write

15

 

20

 

30

 

ns

tSA

tAS

Address Setup to Start of Write

0

 

0

 

0

 

ns

tHA

tWR

Address Hold After End of Write

0

 

0

 

0

 

ns

tHZWE [14, 18,19]

tWZ

Write Enable to Output Disable

 

8

 

10

 

15

ns

tLZWE [14, 18]

tOW

Output Active after End of Write

3

 

3

 

3

 

ns

tBW

-

 

 

Byte Enable to End of Write

15

 

20

 

30

 

ns

Switching Waveforms

Figure 7. SRAM Read Cycle 1: Address Controlled[16, 17, 20]

 

tRC

Address

Address Valid

 

tAA

Data Output

Previous Data Valid

 

tOHA

Notes

16.WE must be HIGH during SRAM read cycles.

17.Device is continuously selected with CE, OE and BHE / BLE LOW.

18.Measured ±200 mV from steady state output voltage.

19.If WE is LOW when CE goes LOW, the outputs remain in the high impedance state.

20.HSB must remain HIGH during READ and WRITE cycles.

Output Data Valid

Document #: 001-07103 Rev. *K

Page 17 of 31

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Cypress CY14B104K manual AC Switching Characteristics, Switching Waveforms, Parameters Sram Read Cycle, Sram Write Cycle